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YJB30GP10A

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Yangzhou Yangjie Elec Tech MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YJB30GP10A

Yangzhou Yangjie Elec Tech · MOSFETs · TO-263

YJB30GP10A from Yangzhou Yangjie Elec Tech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with a threshold of -1.0 V min to -2.5 V max at ID=-250 µA.
2 D passive Drain, the shortened middle lead, which is common with the metal tab; VDS is -100 V max and ID is -30 A at Tc=25 °C.
3 S passive Source; maximum body-diode continuous current is -30 A.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -100 V VGS= 0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-100V,VGS=0V, TJ=25℃ 2
Zero Gate Voltage Drain Current IDSS -5 μA VDS=-100V,VGS=0V, TJ=55℃ 2
Zero Gate Voltage Drain Current IDSS -10 μA VDS=-100V,VGS=0V, TJ=125℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VDS= VGS, ID=-250μA 2
Static Drain-Source On-Resistance RDS(ON) 42 56 mΩ VGS= -10V, ID=-15A 2
Static Drain-Source On-Resistance RDS(ON) 46 62 mΩ VGS= -4.5V, ID=-7A 2
Diode Forward Voltage VSD -1.3 V IS=-15A,VGS=0V 2
Maximum Body-Diode Continuous Current IS -30 A 2
Drain-source Voltage VDS -100 V TA=25℃ 1
Gate-source Voltage VGS -20 20 V TA=25℃ 1
Drain Current ID -30 A Tc=25℃ 1
Drain Current ID -19.2 A Tc=100℃ 1
Pulsed Drain Current IDM -120 A 1
Avalanche energy EAS 162 mJ VDD=50V, RG=25Ω, L=0.5mH 1
Total Power Dissipation PD 125 W Tc=25℃ 1
Total Power Dissipation PD 50 W Tc=100℃ 1
Junction and Storage Temperature Range TJ ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 12 15 ℃/W t≤10S 1
Thermal Resistance Junction-to-Ambient RθJA 50 60 ℃/W Steady-State 1
Thermal Resistance Junction-to-Case RθJC 0.8 1 ℃/W Steady-State 1
Input Capacitance Ciss 2100 pF VDS=-50V,VGS=0V,f=1MHZ 2
Output Capacitance Coss 236 pF VDS=-50V,VGS=0V,f=1MHZ 2
Reverse Transfer Capacitance Crss 48 pF VDS=-50V,VGS=0V,f=1MHZ 2
Total Gate Charge Qg(-10V) 40 nC VGS=-10V,VDS=-50V,ID=-5A 2
Total Gate Charge Qg(-4.5V) 19.4 nC VGS=-10V,VDS=-50V,ID=-5A 2
Gate-Source Charge Qgs 7.8 nC VGS=-10V,VDS=-50V,ID=-5A 2
Gate-Drain Charge Qgd 8.6 nC VGS=-10V,VDS=-50V,ID=-5A 2
Reverse Recovery Charge Qrr 280 nC IF=-5A, di/dt=100A/us 2
Reverse Recovery Time trr 104 ns IF=-5A, di/dt=100A/us 2
Turn-on Delay Time tD(on) 13 ns VGS=-10V,VDD=-50V,IDS=-5A, RGEN=6Ω 2
Turn-on Rise Time tr 39 ns VGS=-10V,VDD=-50V,IDS=-5A, RGEN=6Ω 2
Turn-off Delay Time tD(off) 100.1 ns VGS=-10V,VDD=-50V,IDS=-5A, RGEN=6Ω 2
Turn-off Fall Time tf 105.3 ns VGS=-10V,VDD=-50V,IDS=-5A, RGEN=6Ω 2

CAD (KiCad official)

  • Symbol: YJB30GP10A
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: yjb30gp10a-etched.step / yjb30gp10a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjb30gp10a.step / yjb30gp10a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256 6cc8fa660550f39d, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF