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YGW25N120U2

luxin-semi · IGBT Transistors / Modules · TO-247

YGW25N120U2 from luxin-semi, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with a continuous gate-emitter voltage rating of ±20 V and a transient rating of ±30 V.
2 C passive Collector, rated for a collector-emitter voltage of 1200 V and a DC collector current of 50 A at TC=25°C (25 A at TC=100°C).
3 E passive Emitter, the IGBT's emitter terminal, which is also the anode of the co-packed diode and carries the diode forward current of 30 A at TC=25°C (15 A at TC=100°C).

Key specifications

Parameter Value
Manufacturer luxin-semi
Package TO-247
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: YGW25N120U2
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ygw25n120u2-etched.step / ygw25n120u2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ygw25n120u2.step / ygw25n120u2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: luxin-semi datasheet (8 pp, sha256 be2a7fd247723b0d, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF