component
YGP20N65T2
Public Made by Adomby adom
luxin-semi IGBT Transistors / Modules, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 18d ago |
| viewers | 18d ago |
| package.json | 2h ago |
| page.json | 2h ago |
| README.md | 18d ago |
| ygp20n65t2-etched.glb | 18d ago |
| ygp20n65t2-etched.step | 18d ago |
| ygp20n65t2-hero.glb | 2h ago |
| ygp20n65t2-hero.overlay.json | 2h ago |
| ygp20n65t2.glb | 18d ago |
| ygp20n65t2.kicad_mod | 18d ago |
| ygp20n65t2.kicad_sym | 18d ago |
| ygp20n65t2.lbr | 18d ago |
| ygp20n65t2.step | 18d ago |
YGP20N65T2
luxin-semi · IGBT Transistors / Modules · TO-220
YGP20N65T2 from luxin-semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; continuous gate-emitter voltage ±20 V, transient ±30 V, threshold 4.4 to 6.4 V at IC = 250 µA. |
| 2 | C | passive | Collector (also the mounting tab); collector-emitter voltage 650 V, DC collector current 20 A at TC = 100°C, pulsed 60 A. |
| 3 | E | passive | Emitter; the co-packed anti-parallel diode carries 20 A forward current at TC = 100°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | luxin-semi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | BVCES | 650 | V | VGE = 0V, IC = 1mA | 3 | ||
| Collector to Emitter Saturation Voltage | VCE(SAT) | 1.65 | 2.05 | V | IC = 20A, VGE = 15V | 3 | |
| G-E Threshold Voltage | VGE(th) | 4.4 | 5.4 | 6.4 | V | VGE = VCE, IC = 250μA | 3 |
| Collector Cut-Off Current | ICES | 40 | μA | VCE = 650V, VGE = 0V | 3 | ||
| G-E Leakage Current | IGES | -200 | 200 | nA | VGE = ±20V, VCE = 0V | 3 | |
| Collector-Emitter Voltage | VCE | 650 | V | Tj= 25℃ | 2 | ||
| DC collector current | IC | 40 | A | TC = 25°C, limited by Tjmax | 2 | ||
| DC collector current | IC | 20 | A | TC = 100°C, limited by Tjmax | 2 | ||
| Diode Forward current | IF | 40 | A | TC = 25°C, limited by Tjmax | 2 | ||
| Diode Forward current | IF | 20 | A | TC = 100°C, limited by Tjmax | 2 | ||
| Continuous Gate-emitter voltage | VGE | -20 | 20 | V | 2 | ||
| Transient Gate-emitter voltage | VGE | -30 | 30 | V | 2 | ||
| Turn off safe operating area | 60 | A | VCE ≤650V, Tj ≤ 175°C | 2 | |||
| Pulsed collector current | ICM | 60 | A | VGE=15V, tp limited by Tjmax | 2 | ||
| Short Circuit Withstand Time | Tsc | 5 | μs | VGE= 15V, VCE≤ 400V | 2 | ||
| Power dissipation TO-220 | Ptot | 125 | W | Tj=25℃ | 2 | ||
| Operating junction temperature | Tj | -40 | 175 | °C | 2 | ||
| Storage temperature | Ts | -55 | 175 | °C | 2 | ||
| Soldering temperature, wave soldering | 260 | °C | 1.6mm (0.063in.) from case for 10s | 2 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw, maximum of mounting processes: 3 | 2 | ||
| IGBT thermal resistance, junction - case | Rθ(j-c) | 1.2 | K/W | TO-220 | 2 | ||
| Diode thermal resistance, junction - case | Rθ(j-c) | 2.38 | K/W | TO-220 | 2 | ||
| Transconductance | gfs | 10 | S | VCE=20V, IC=15A | 3 | ||
| Input capacitance | Cies | 1050 | pF | VCE = 25V, VGE = 0V, f = 1MHz | 3 | ||
| Output capacitance | Coes | 50 | pF | VCE = 25V, VGE = 0V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Cres | 20 | pF | VCE = 25V, VGE = 0V, f = 1MHz | 3 | ||
| Gate charge | QG | 45 | nC | VCC = 520V, IC = 20A, VGE = 15V | 3 | ||
| Short circuit collector current | IC(SC) | 150 | A | VGE=15V,tSC≤5us, VCC=400V, Tj,start=25°C | 3 | ||
| Turn-on Delay Time | td(on) | 20 | ns | Tj=25C, VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20Ω | 4 | ||
| Rise Time | tr | 40 | ns | Tj=25C, VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20Ω | 4 | ||
| Turn-off Delay Time | td(off) | 60 | ns | Tj=25C, VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20Ω | 4 | ||
| Fall Time | tf | 75 | ns | Tj=25C, VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20Ω | 4 | ||
| Turn-on Energy | Eon | 0.47 | mJ | Tj=25C, VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20Ω | 4 | ||
| Turn-off Energy | Eoff | 0.1 | mJ | Tj=25C, VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20Ω | 4 | ||
| Diode Forward Voltage | VFM | 1.9 | V | IF = 20A | 4 | ||
| Reverse Recovery Time | Trr | 50 | ns | IF= 15A, VR = 300V, di/dt =200A/μs | 4 | ||
| Reverse Recovery Current | Irr | 4 | A | IF= 15A, VR = 300V, di/dt =200A/μs | 4 | ||
| Reverse Recovery Charge | Qrr | 83 | nC | IF= 15A, VR = 300V, di/dt =200A/μs | 4 |
CAD (KiCad official)
- Symbol:
YGP20N65T2 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ygp20n65t2-etched.step/ygp20n65t2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ygp20n65t2.step/ygp20n65t2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: luxin-semi datasheet (12 pp, sha256
0e9e677003c7d0a3, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).