component

YFW80N10AT

Public Made by Adom

by adom

YFW MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsyfw80n10atfactory-2.0.0extractor-text

Verified YFW80N10AT

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: YFW80N10AT · TO-220AB · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-95qrmyzb/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): the datasheet dimensions give no height or body size to compare (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ yfw80n10at.kicad_sym✓ yfw80n10at.kicad_mod✓ yfw80n10at.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers yfw80n10at: viewers · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 7d ago
yfw80n10at-etched.glb Publish 0.1.0 · Ray 7d ago
yfw80n10at-etched.step yfw80n10at: factory component page (tier=lcsc) · Ray 7d ago
yfw80n10at-hero.glb yfw80n10at: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
yfw80n10at-hero.overlay.json Publish 0.1.0 · Ray 7d ago
yfw80n10at.glb Publish 0.1.0 · Ray 7d ago
yfw80n10at.kicad_mod Publish 0.1.0 · Ray 7d ago
yfw80n10at.kicad_sym Publish 0.1.0 · Ray 7d ago
yfw80n10at.lbr Publish 0.1.0 · Ray 7d ago
yfw80n10at.step Publish 0.1.0 · Ray 7d ago

YFW80N10AT

YFW · MOSFETs · TO-220AB

YFW80N10AT from YFW, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold VGS(th) 2.0 to 4.0 V at ID=250 µA.
2 D passive Drain (also connected to the mounting tab); VDS rated 100 V, continuous ID 80 A at TC=25 °C, pulsed IDM 210 A.
3 S passive Source; body diode continuous forward current IS 60 A and pulsed ISP 180 A.

Key specifications

Parameter Value
Manufacturer YFW
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 111 V VGS=0V, ID=250uA 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, ID=250uA 2
Drain-source on-state resistance RDS(ON) 8 12 mΩ VGS=10V, ID=20A 2
Drain-source on-state resistance RDS(ON) 12 14 mΩ VGS=4.5V, ID=12A 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V 2
Drain-Source Leakage Current IDSS 1 μA VDS=100V, VGS=0V 2
Diode forward current IS 60 A VGS<Vth 2
Pulsed Source Current ISP 180 A VGS<Vth 2
Diode Forward Voltage VSD 1.3 V IS=20A, VGS=0 V 2
Drain-Source Voltage VDS 100 V Tc=25°C 1
Gate-Source Voltage VGS -20 20 V Tc=25°C 1
Continuous drain current ID 80 A TC=25 ℃ 1
Pulsed drain current IDM 210 A TC=25 ℃ 1
Power dissipation PD 107 W TC=25 ℃ 1
Single Pulse Avalanche Energy EAS 183.8 mJ VDD=30V, VGS=10V, L=0.3mH, starting Tj=25°C 1
Operation and storage temperature TSTG, TJ -55 150 °C 1
Thermal Resistance Junction-Case RθJC 1.17 °C/W 1
Thermal Resistance Junction-Ambient RθJA 62 °C/W 1
Gate resistance RG 5.5 Ω f= 1 MHz, Open drain 2
Input Capacitance Ciss 1998.1 PF VGS=0V, VDS=50V, f=100KHz 2
Output Capacitance Coss 321.7 PF VGS=0V, VDS=50V, f=100KHz 2
Reverse Transfer Capacitance Crss 7.1 PF VGS=0V, VDS=50V, f=100KHz 2
Turn-on delay time td(on) 22.1 ns VGS=10V, VDS=50V, RG=2Ω, ID=25A 2
Rise Time Tr 5.2 ns VGS=10V, VDS=50V, RG=2Ω, ID=25A 2
Turn-Off Delay Time td(OFF) 44 ns VGS=10V, VDS=50V, RG=2Ω, ID=25A 2
Fall Time tf 8.4 ns VGS=10V, VDS=50V, RG=2Ω, ID=25A 2
Total Gate Charge Qg 28.9 nC ID=25A, VDS=50V, VGS=10V 2
Gate-Source Charge Qgs 6 nC ID=25A, VDS=50V, VGS=10V 2
Gate-Drain Charge Qgd 6.8 nC ID=25A, VDS=50V, VGS=10V 2
Gate plateau voltage Vplateau 3.7 V ID=25A, VDS=50V, VGS=10V 2
Reverse Recovery Time trr 102.9 ns IS=25A, dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 379 nC IS=25A, dI/dt=100A/µs 2
Peak reverse recovery current Irrm 6.4 A IS=25A, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: YFW80N10AT
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: yfw80n10at-etched.step / yfw80n10at-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yfw80n10at.step / yfw80n10at.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (6 pp, sha256 e2ce045936791141, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF