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YFW80N10AD

Public Made by Adom

by adom

YFW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

YFW80N10AD

YFW · MOSFETs · TO-252

YFW80N10AD from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±20 V with threshold VGS(th) of 1 V min to 2.5 V max at ID=250 µA.
2 D passive Drain (center lead, electrically common with the tab); VDSS 100 V and continuous drain current 80 A, pulsed 320 A.
3 S passive Source; body-diode continuous current IS 80 A and pulsed 320 A.

Key specifications

Parameter Value
Manufacturer YFW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Drain-Source Leakage Current IDSS 1 μA VDS=100V , VGS=0V 2
Gate-Source Leakage IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS= VGS, ID=250μA 2
Drain-Source On State Resistance RDS(ON) 7.2 8.7 mΩ VGS=10V, ID=30A, TO-252/PDFN 2
Maximum Body-Diode Continuous Current IS 80 A 2
Maximum Body-Diode Pulsed Current ISM 320 A 2
Drain-Source Voltage VDS 100 V Tc=25°C 2
Gate-Source Voltage VGS -20 20 V Tc=25°C 2
Continuous Drain Current ID 80 A Tc=25°C 2
Pulsed Drain Current IDM 320 A Tc=25°C; 300 µs pulse width, 2 % duty cycle 2
Power Dissipation PD 110 W Tc=25°C, TO-252/263/220AB/PDFN 2
Single Pulse Avalanche Energy EAS 132 mJ Tc=25°C 2
Operating Temperature Range TJ 150 °C Tc=25°C 2
Storage Temperature Range TSTG -55 150 °C 2
Thermal Resistance, Junction-to-case RθJC 1.1 °C/W TO-252/263/220AB/PDFN 2
Thermal Resistance, Junction ambient RθJA 62 °C/W 2
Forward Transconductance gfs 50 S VDS = 5 V, ID = 30A 2
Input Capacitance Ciss 2000 PF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 511 PF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 12 PF VDS=15V, VGS=0V, f=1MHz 2
Turn-on delay time td(on) 17 nS VDD=50V, VGS=10V, RG=3Ω, ID=30A 2
Rise Time Tr 20 nS VDD=50V, VGS=10V, RG=3Ω, ID=30A 2
Turn-Off Delay Time td(OFF) 60 nS VDD=50V, VGS=10V, RG=3Ω, ID=30A 2
Fall Time tf 18 nS VDD=50V, VGS=10V, RG=3Ω, ID=30A 2
Total Gate Charge Qg 10 nC VDS=50V, VGS=10V, ID=30A 2
Gate-Source Charge Qgs 14 nC VDS=50V, VGS=10V, ID=30A 2
Gate-Drain Charge Qgd 28 nC VDS=50V, VGS=10V, ID=30A 2
Drain-Source Diode Forward Voltage VSD 0.85 V TJ = 25ºC, IS = 30A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: YFW80N10AD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: yfw80n10ad-etched.step / yfw80n10ad-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yfw80n10ad.step / yfw80n10ad.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (6 pp, sha256 35b92053c00ca0f5, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF