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YFW80N04AD

Public Made by Adom

by adom

YFW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YFW80N04AD

YFW · MOSFETs · TO-252

YFW80N04AD from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±20 V, threshold 1.1 to 2.4 V at ID = 250 µA, and the device operates with gate drive as low as 4.5 V.
2 D passive Drain (middle lead and exposed tab); VDS rating 40 V, continuous drain current 80 A, pulsed 350 A.
3 S passive Source; body-diode continuous current up to 80 A, with RDS(on) of 5.5 mΩ typ and 7 mΩ max at VGS = 10 V.

Key specifications

Parameter Value
Manufacturer YFW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 2
Gate-Source Voltage VGS -20 20 V 2
Continue Drain Current ID 80 A 2
Pulsed Drain Current IDM 350 A Note1: pulse test 300 µs pulse width, 2 % duty cycle 2
Power Dissipation PD 80 W 2
Single Pulse Avalanche Energy EAS 750 mJ Note1: pulse test 300 µs pulse width, 2 % duty cycle 2
Operating Temperature Range TJ 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Thermal Resistance, Junction to Case RθJC 1.88 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 62 °C/W 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS = 0 V, ID = 250 µA 2
Drain-Source Leakage Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Gate Leakage Current IGSS -100 100 nA VGS = ± 20 V, VDS = 0 V 2
Gate-Source Threshold Voltage VGS(th) 1.1 2.4 V VDS = VGS , ID = 250 µA 2
Drain-Source On-State Resistance (VGS = 10 V) RDS(on) 5.5 7 mΩ VGS = 10 V, ID = 30A 2
Drain-Source On-State Resistance (VGS = 4.5 V) RDS(on) 8 12 mΩ VGS = 4.5 V, ID = 20A 2
Forward Transconductance gfs 15 S VDS = 10 V, ID = 20 A 2
Input Capacitance Ciss 2662 3200 pF VDS=20V, VGS=0V, f=1MHz 2
Maximum Body-Diode Continuous Current IS 80 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=10A, TJ=25 2
Reverse Recovery Time trr 45 ns TJ = 25℃, IF= 20A, di/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 50 nC 2

CAD (KiCad official)

  • Symbol: YFW80N04AD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: yfw80n04ad-etched.step / yfw80n04ad-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yfw80n04ad.step / yfw80n04ad.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (5 pp, sha256 9cfd7bc00be36270, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF