Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

YFW60N06AT

YFW · MOSFETs · TO-220AB

YFW60N06AT from YFW, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold VGS(th) 1 V to 2.5 V at ID = 250 µA.
2 D passive Drain; VDS rated 60 V, continuous drain current 60 A, pulsed 200 A, and connected to the mounting tab.
3 S passive Source; body diode continuous current up to 60 A and pulsed 200 A.

Key specifications

Parameter Value
Manufacturer YFW
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0 V, ID = 250 µA 2
Drain-Source Leakage Current IDSS 1 µA VDS = 60V, VGS = 0 V 2
Gate Leakage Current IGSS -100 100 nA VGS = ± 20 V, VDS = 0 V 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 µA 2
Drain-Source On-State Resistance RDS(on) 12 17 mΩ VGS = 10 V, ID = 30A 2
Drain-Source On-State Resistance RDS(on) 16 25 mΩ VGS = 4.5 V, ID = 20A 2
Maximum Body-Diode Continuous Current IS 60 A 2
Maximum Body-Diode Pulsed Current ISM 200 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V ISD = 30A 2
Drain-Source Voltage VDS 60 V Tc=25°C 1
Gate-Source Voltage VGS -20 20 V Tc=25°C 1
Continue Drain Current ID 60 A Tc=25°C 1
Pulsed Drain Current IDM 200 A Tc=25°C; 300 µs pulse width, 2 % duty cycle 1
Power Dissipation PD 75 W Tc=25°C 1
Single Pulse Avalanche Energy EAS 80 mJ Tc=25°C 1
Operating Temperature Range TJ 150 °C Tc=25°C 1
Storage Temperature Range TSTG -55 150 °C Tc=25°C 1
Thermal Resistance, Junction to Case RθJC 2 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 62 °C/W 1
Input Capacitance Ciss 2030 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 130 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 115 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Turn-on Delay Time td(ON) 11 ns VDD=30V, VGS=10V, RG=1.8Ω, ID=30A 2
Rise Time tr 79 ns VDD=30V, VGS=10V, RG=1.8Ω, ID=30A 2
Turn-Off Delay Time td(OFF) 33 ns VDD=30V, VGS=10V, RG=1.8Ω, ID=30A 2
Fall Time tf 105 ns VDD=30V, VGS=10V, RG=1.8Ω, ID=30A 2
Total Gate Charge QG 45 nC VDS=30V, VGS=10V, ID=30A 2
Gate to Source Charge QGS 8 nC VDS=30V, VGS=10V, ID=30A 2
Gate to Drain Charge QGD 11 nC VDS=30V, VGS=10V, ID=30A 2
Reverse Recovery Time trr 14 ns IS = IF, ISD=30A, VGS = 0 V, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 10 μC IS = IF, ISD=30A, VGS = 0 V, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: YFW60N06AT
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: yfw60n06at-etched.step / yfw60n06at-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yfw60n06at.step / yfw60n06at.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (5 pp, sha256 bec2b48b20819621, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF