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YFW5N65AF

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YFW MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YFW5N65AF

YFW · MOSFETs · TO-220F-3

YFW5N65AF from YFW, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V, threshold VGS(th) 2 to 4 V at VDS = VGS, ID = 250 µA, gate leakage max ±100 nA.
2 D passive Drain; drain-source voltage 650 V, continuous drain current 5 A, pulsed 20 A, RDS(ON) typ 2.2 Ω and max 2.55 Ω at VGS = 10 V, ID = 1 A.
3 S passive Source; connected to the body diode anode, with body-diode continuous current up to 5 A and pulsed 20 A.

Key specifications

Parameter Value
Manufacturer YFW
Package TO-220F-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 680 V VGS = 0 V, ID = 250 µA 2
Drain-Source Leakage Current IDSS 1 µA VDS = 650 V, VGS = 0 V 2
Gate Leakage Current IGSS -100 100 nA VGS = ± 30 V, VDS = 0 V 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Drain-Source On-State Resistance RDS(ON) 2.2 2.55 Ω VGS = 10 V, ID = 1A 2
Maximum Body-Diode Continuous Current IS 5 A 2
Maximum Body-Diode Pulsed Current ISM 20 A 2
Drain-Source Diode Forward Voltage VSD 0.9 V ISD=1A 2
Drain-Source Voltage VDS 650 V Tc=25°C 1
Gate-Source Voltage VGS -30 30 V Tc=25°C 1
Continue Drain Current ID 5 A Tc=25°C 1
Pulsed Drain Current IDM 20 A Note1: 300 µs pulse width, 2 % duty cycle 1
Power Dissipation PD 30 W TO-220F, Tc=25°C 1
Single Pulse Avalanche Energy EAS 150 mJ Note1: 300 µs pulse width, 2 % duty cycle 1
Operating Temperature Range TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 4.17 °C/W TO-220F 1
Thermal Resistance, Junction to Ambient RθJA 100 °C/W TO-220F 1
Forward Transconductance gfs 3.5 S VDS = 15 V, ID = 2 A 2
Input Capacitance Ciss 715 pF VGS = 0 V, VDS = 2V, f = 200k Hz 2
Output Capacitance Coss 65 pF VGS = 0 V, VDS = 2V, f = 200k Hz 2
Reverse Transfer Capacitance Crss 10 pF VGS = 0 V, VDS = 2V, f = 200k Hz 2
Turn-on Delay Time td(on) 12 ns ID = 4A, VDD =400V, RG= 25 Ω 2
Rise Time Tr 22 ns ID = 4A, VDD =400V, RG= 25 Ω 2
Turn-Off Delay Time td(OFF) 50 ns ID = 4A, VDD =400V, RG= 25 Ω 2
Fall Time tf 48 ns ID = 4A, VDD =400V, RG= 25 Ω 2
Total Gate Charge Qg 15 nC ID = 4 A, VDD =520V, VGS=10 V 2
Gate to Source Charge Qgs 2.5 nC ID = 4 A, VDD =520V, VGS=10 V 2
Gate to Drain Charge Qgd 7.5 nC ID = 4 A, VDD =520V, VGS=10 V 2
Reverse Recovery Time trr 430 ns ISD = 4 A, VGS=0 V, dIF / dt = 100 A/µs 2
Reverse Recovery Charge Qrr 1.27 µC ISD = 4 A, VGS=0 V, dIF / dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: YFW5N65AF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (9 pp, sha256 71f3960fcfaed29c, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF