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YFW3N10B

Public Made by Adom

by adom

YFW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YFW3N10B

YFW · MOSFETs · SOT-23

YFW3N10B from YFW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) of 1.0 V min, 1.5 V typ, 2.5 V max.
2 S passive Source; connects to the body diode anode, with continuous source current IS up to 1.2 A and ID of 2.8 A at TA=25°C.
3 D passive Drain; VDS rated 100 V with continuous drain current of 2.8 A at TA=25°C and pulsed drain current of 5 A.

Key specifications

Parameter Value
Manufacturer YFW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate - Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 2.8 A VGS @ 10V, TA=25℃ 1
Continuous Drain Current ID 1 A VGS @ 10V, TA=70℃ 1
Pulsed Drain Current IDM 5 A 1
Total Power Dissipation PD 1 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance Junction-Ambient RθJA 125 °C/W 1
Thermal Resistance Junction-Case RθJC 80 °C/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 260 310 mΩ VGS=10V, ID=1A 2
Static Drain-Source On-Resistance RDS(ON) 270 320 mΩ VGS=4.5V, ID=0.5A 2
Gate-Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 μA VDS=80V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 μA VDS=80V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 2.8 5.6 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge(10V) Qg 9.7 13.6 nC VDS=80V, VGS=10V, ID=1A 2
Gate-Source Charge Qgs 1.6 2.2 nC VDS=80V, VGS=10V, ID=1A 2
Gate-Drain Charge Qgd 1.7 2.4 nC VDS=80V, VGS=10V, ID=1A 2
Turn-on delay time td(on) 1.6 3.2 ns VDD=50V, VGS=10V, RG=3.3, ID=1A 2
Rise Time Tr 19 34 ns VDD=50V, VGS=10V, RG=3.3, ID=1A 2
Turn-Off Delay Time td(OFF) 13.6 27 ns VDD=50V, VGS=10V, RG=3.3, ID=1A 2
Fall Time tf 19 38 ns VDD=50V, VGS=10V, RG=3.3, ID=1A 2
Input Capacitance Ciss 508 711 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 29 41 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 16.4 23 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 1.2 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 5 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Reverse Recovery Time trr 14 ns IF=1A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 9.3 nC IF=1A, dI/dt=100A/µs, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.067 V/°C Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -4.2 mV/°C 2
Forward Transconductance gFS 2.4 S VDS=5V, ID=1A 2

CAD (KiCad official)

  • Symbol: YFW3N10B
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: yfw3n10b-etched.step / yfw3n10b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yfw3n10b.step / yfw3n10b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (5 pp, sha256 2e009ac12118229a, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF