component
YFW3416
Public Made by Adomby adom
YFW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYFW3416
YFW · MOSFETs · SOT-23
YFW3416 from YFW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | MOSFET gate terminal; gate-source voltage is rated VGS ±8 V. |
| 2 | SOURCE | passive | MOSFET source terminal; maximum body-diode continuous current IS is 2 A. |
| 3 | DRAIN | passive | MOSFET drain terminal; rated for drain-source voltage VDS of 20 V and continuous drain current ID of 6.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | 6.5 | A | 1 | |||
| Drain Current-Pulsed (note 1) | IDM | 30 | A | 1 | |||
| Pulsed Drain Current (as printed; symbol PD, likely power dissipation) | PD | 1.4 | W | 1 | |||
| Junction Temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction to Ambient | RθJA | 70 | 90 | ℃/W | t ≤ 10s | 1 | |
| Thermal Resistance From Junction to Ambient Steady-State | RθJA | 100 | 125 | ℃/W | Steady-State | 1 | |
| Maximum Junction-to-Lead Steady-State | RθJL | 63 | 80 | ℃/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Zero Gate Voltage Drain current | IDSS | 1 | uA | VDS=20V, VGS=0V | 2 | ||
| Gate-body Leakage | IGSS | -10 | 10 | uA | VDS=±8V, VDS=0V | 2 | |
| On state drain current | ID(ON) | 30 | A | VGS=4.5V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance (VGS=4.5V) | RDS(ON) | 16 | 22 | mΩ | VGS=4.5V, ID=6.5A | 2 | |
| Static Drain-Source On-Resistance (VGS=2.5V) | RDS(ON) | 18 | 26 | mΩ | VGS=2.5V, ID=5.5A | 2 | |
| Static Drain-Source On-Resistance (VGS=1.8V) | RDS(ON) | 21 | 34 | mΩ | VGS=1.8V, ID=5A | 2 | |
| Gate-Threshold voltage | VGS(th) | 0.4 | 0.7 | 1.1 | V | VDS=VGS, ID=250uA | 2 |
| Diode Forward Voltage | VSD | 0.62 | 1 | V | IS=1A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2 | A | 2 | |||
| Input capacitance | Ciss | 1295 | 1650 | pF | VDS=10V, VGS=0V,f=1MHz | 2 | |
| Body Diode Reverse Recovery Time | trr | 31 | 41 | nS | IF=6.5A, dI/dt=100A/ms | 2 |
CAD (KiCad official)
- Symbol:
YFW3416 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
yfw3416-etched.step/yfw3416-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yfw3416.step/yfw3416.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (6 pp, sha256
11562d6d23eed0a1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).