component
YFW3409MI
Public Made by Adomby adom
YFW MOSFETs, SOT23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYFW3409MI
YFW · MOSFETs · SOT23-3L
YFW3409MI from YFW, in a SOT23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a Gate-Source Voltage rating of ±20 V and a threshold of -1.0 V min to -2.5 V max at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET, with the body diode running from drain to source (VSD max -1.2 V at IS=-5A). |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for VDS -30 V and continuous drain current ID -12 A (pulsed -48 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | -12 | A | Ta=25℃ | 1 | ||
| Pulsed Drain Current (note 1) | IDM | -48 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 1.5 | W | Ta=25℃ | 1 | ||
| Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction to Ambient (note 2) | RθJA | 83.3 | ℃/W | Note 2: measured with device mounted on 1 inch² pad of 2oz copper FR4 PCB | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Gate-Threshold voltage (note3) | VGS (th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250uA | 2 |
| Gate-body Leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain current | IDSS | 1 | uA | VDS=-30V, VGS=0V | 2 | ||
| Drain-Source On-Resistance (note3) | RDS(ON) | 21 | 27 | mΩ | VGS=-10V, ID=-7A | 2 | |
| Drain-Source On-Resistance (note3) | RDS(ON) | 29 | 37 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Diode forward voltage | VSD | -1.2 | V | IS=-5A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
YFW3409MI - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT23-3L (KiCad packages3D, STEP)
- 3D model files:
yfw3409mi-etched.step/yfw3409mi-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yfw3409mi.step/yfw3409mi.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (5 pp, sha256
172b456c34349845, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).