component
YFW30P06AD
Public Made by Adomby adom
YFW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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YFW30P06AD
YFW · MOSFETs · TO-252
YFW30P06AD from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 V min to -2.5 V max at ID=-250uA. |
| 2 | D | passive | Drain, connected to the exposed tab and the short middle lead; VDS rated -60 V, continuous ID -30 A at TC=25°C, pulsed IDM -70 A. |
| 3 | S | passive | Source; continuous source current IS -35 A and pulsed source current ISM -70 A through the body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | -68 | V | VGS=0V, ID=-250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 21 | 25 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 26 | 33 | mΩ | VGS=-4.5V, ID=-8A | 2 | |
| Gate-Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | μA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 7 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Continuous Source Current | IS | -35 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -70 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -30 | A | VGS @ -10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -27 | A | VGS @ -10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -70 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 113 | mJ | 1 | |||
| Avalanche Current | IAS | 47.6 | A | 1 | |||
| Total Power Dissipation | PD | 52.1 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | °C/W | Surface mounted on a 1 inch² FR-4 board with 2OZ copper (footnote 1) | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 2.4 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
YFW30P06AD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yfw30p06ad-etched.step/yfw30p06ad-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yfw30p06ad.step/yfw30p06ad.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (5 pp, sha256
a515ffc8905766a3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# YFW30P06AD
**YFW** · MOSFETs · TO-252
YFW30P06AD from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 V min to -2.5 V max at ID=-250uA. |
| 2 | D | passive | Drain, connected to the exposed tab and the short middle lead; VDS rated -60 V, continuous ID -30 A at TC=25°C, pulsed IDM -70 A. |
| 3 | S | passive | Source; continuous source current IS -35 A and pulsed source current ISM -70 A through the body diode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | -68 | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 21 | 25 | mΩ | VGS=-10V, ID=-10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 26 | 33 | mΩ | VGS=-4.5V, ID=-8A | 2 |
| Gate-Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | μA | VDS=-48V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | μA | VDS=-48V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance | Rg | | 7 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | -35 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -70 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | -60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | -30 | A | VGS @ -10V, TC=25℃ | 1 |
| Continuous Drain Current | ID | | | -27 | A | VGS @ -10V, TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | -70 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 113 | mJ | | 1 |
| Avalanche Current | IAS | | | 47.6 | A | | 1 |
| Total Power Dissipation | PD | | | 52.1 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | °C/W | Surface mounted on a 1 inch² FR-4 board with 2OZ copper (footnote 1) | 1 |
| Thermal Resistance Junction to Case | RθJC | | | 2.4 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `YFW30P06AD`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `yfw30p06ad-etched.step` / `yfw30p06ad-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yfw30p06ad.step` / `yfw30p06ad.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [YFW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603393358002081792) (5 pp, sha256 `a515ffc8905766a3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/yfw30p06ad-datasheet.pdf)