component

YFW2P15MI

Public Made by Adom

by adom

YFW MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YFW2P15MI

YFW · MOSFETs · SOT-23-3L

YFW2P15MI from YFW, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of -2.0 V min to -4.0 V max at ID=-250uA.
2 S passive Source of the P-channel MOSFET; the body diode runs from source to drain, with continuous drain current of -2.7 A at TA=25°C.
3 D passive Drain, the single lead on one side of the package; drain-source voltage rated -150 V and pulsed drain current -8.5 A.

Key specifications

Parameter Value
Manufacturer YFW
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -150 V 1
Gate - Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ -10V @TA=25°C ID -2.7 A VGS @ -10V, TA=25℃ 1
Continuous Drain Current, VGS @ -10V @TA=70°C ID -1.8 A VGS @ -10V, TA=70℃ 1
Pulsed Drain Current IDM -8.5 A 1
Single Pulse Avalanche Energy EAS 56.5 mJ 1
Avalanche Current IAS 5 A 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance Junction-Ambient RθJA 125 °C/W Note 1: surface mounted on a 1 inch 2 FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 40 °C/W Note 1: surface mounted on a 1 inch 2 FR-4 board with 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS -150 -168 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 620 780 mΩ VGS=-10V, ID=-1A 2
Static Drain-Source On-Resistance RDS(ON) 700 980 mΩ VGS=-6V, ID=-0.5A 2
Gate-Threshold Voltage VGS(th) -2 -3 -4 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 μA VDS=120V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 30 μA VDS=120V, VGS=0V, TJ=85℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 12 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 10.8 nC VDS=-75V, VGS=-10V, ID=1A 2
Gate-Source Charge Qgs 3.1 nC VDS=-75V, VGS=-10V, ID=1A 2
Gate-Drain Charge Qgd 2.2 nC VDS=-75V, VGS=-10V, ID=1A 2
Turn-on delay time td(on) 21 nS VDD=-30V, VGS=-10V, RG=6Ω, ID=-1A 2
Rise Time Tr 16 nS VDD=-30V, VGS=-10V, RG=6Ω, ID=-1A 2
Turn-Off Delay Time td(OFF) 40 nS VDD=-30V, VGS=-10V, RG=6Ω, ID=-1A 2
Fall Time tf 18 nS VDD=-30V, VGS=-10V, RG=6Ω, ID=-1A 2
Input Capacitance Ciss 706 PF VDS=-75V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 23 PF VDS=-75V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 13 PF VDS=-75V, VGS=0V, f=1.0MHz 2

CAD (KiCad official)

  • Symbol: YFW2P15MI
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: yfw2p15mi-etched.step / yfw2p15mi-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yfw2p15mi.step / yfw2p15mi.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (5 pp, sha256 aab0a0a3e9e2403f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF