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Contents

README

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XRS80P10T

XNRUSEMI · MOSFETs · TO-220AB

XRS80P10T from XNRUSEMI, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -2 V min, -3 V typ and -4 V max, and gate leakage up to ±100 nA.
2 D passive Drain (connected to the mounting tab); drain-source voltage -100 V max, continuous drain current -80 A at TC=25℃ and pulsed -260 A.
3 S passive Source; continuous body-diode source current up to -80 A with forward voltage of -1.2 V max at IS=-15A.

Key specifications

Parameter Value
Manufacturer XNRUSEMI
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ -80 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ -41 A VGS @ 10V 1
Pulsed Drain Current IDM -260 A 1
Total Power Dissipation PD@TC=25℃ 250 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 22 25 mΩ VGS=-10V, ID=-15A 2
Gate Threshold Voltage VGS(th) -4 -3 -2 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-100V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -80 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-15A, TJ=25C 2
Total Gate Charge Qg 76 nC VDS=-30V, VGS=-10V, ID=-3A 2
Gate-Source Charge Qgs 13 nC VDS=-30V, VGS=-10V, ID=-3A 2
Gate-Drain Charge Qgd 12.4 nC VDS=-30V, VGS=-10V, ID=-3A 2
Turn-On Delay Time Td(on) 13 ns VGS=-10V, VDD=-50V, RL=0.75Ω, RGEN=3Ω, ID=-15A 2
Rise Time Tr 51 ns VGS=-10V, VDD=-50V, RL=0.75Ω, RGEN=3Ω, ID=-15A 2
Turn-Off Delay Time Td(off) 177 ns VGS=-10V, VDD=-50V, RL=0.75Ω, RGEN=3Ω, ID=-15A 2
Fall Time Tf 82 ns VGS=-10V, VDD=-50V, RL=0.75Ω, RGEN=3Ω, ID=-15A 2
Input Capacitance Ciss 4200 pF VDS=-50V, VGS=0V, f=1MHz 2
Output Capacitance Coss 536 pF VDS=-50V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 52 pF VDS=-50V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 110 nS IF=-15A, di/dt=100A/µs, TJ=25C 2
Reverse Recovery Charge Qrr 590 nC IF=-15A, di/dt=100A/µs, TJ=25C 2

CAD (KiCad official)

  • Symbol: XRS80P10T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: xrs80p10t-etched.step / xrs80p10t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xrs80p10t.step / xrs80p10t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XNRUSEMI datasheet (8 pp, sha256 618ea706eeb0aaaa, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF