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XRS15V06S

XNRUSEMI · MOSFETs · SOP-8

XRS15V06S from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, 60V VDSS rating).
2 G1 input Gate of MOSFET 1, rated ±20V maximum gate-source voltage with threshold 1.0 to 2.5V.
3 S2 passive Source of MOSFET 2 (N-channel, 60V VDSS rating).
4 G2 input Gate of MOSFET 2, rated ±20V maximum gate-source voltage with threshold 1.0 to 2.5V.
5 D2 passive Drain of MOSFET 2, 60V maximum drain-source voltage and 15A continuous current at TC=25℃.
6 D2 passive Drain of MOSFET 2, 60V maximum drain-source voltage and 15A continuous current at TC=25℃ (shorted to pin 5).
7 D1 passive Drain of MOSFET 1, 60V maximum drain-source voltage and 15A continuous current at TC=25℃.
8 D1 passive Drain of MOSFET 1, 60V maximum drain-source voltage and 15A continuous current at TC=25℃ (shorted to pin 7).

Key specifications

Parameter Value
Manufacturer XNRUSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 15 A TC = 25℃ 1
Continuous Drain Current ID 9 A TC = 100℃ 1
Pulsed Drain Current IDM 180 A note1 1
Single Pulsed Avalanche Energy EAS 36 mJ note2 1
Power Dissipation PD 60 W TC = 25℃ 1
Thermal Resistance, Junction to Case RθJC 2.5 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V, 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 12 15 mΩ VGS=10V, ID=20A 2
Static Drain-Source on-Resistance RDS(on) 15 20 mΩ VGS=4.5V, ID=10A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=30A 2
Maximum Continuous Drain to Source Diode Forward Current IS 15 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 180 A 2

CAD (KiCad official)

  • Symbol: XRS15V06S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: xrs15v06s-etched.step / xrs15v06s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xrs15v06s.step / xrs15v06s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XNRUSEMI datasheet (5 pp, sha256 1b296c1c83073523, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF