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Ray Publish 0.1.0 0e26b84 7d ago

XR4953A

XNRUSEMI · MOSFETs · SOP-8

XR4953A from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; the device is rated for VDS of -30 V and continuous drain current of -5.3 A at TA=25℃.
2 G1 input Gate of P-channel MOSFET 1; gate-source voltage is limited to ±20 V with a threshold of -1.0 to -2.1 V.
3 S2 passive Source of P-channel MOSFET 2; the device is rated for VDS of -30 V and continuous drain current of -5.3 A at TA=25℃.
4 G2 input Gate of P-channel MOSFET 2; gate-source voltage is limited to ±20 V with a threshold of -1.0 to -2.1 V.
5 D2 passive Drain of P-channel MOSFET 2, tied to pin 6; pulsed drain current is rated -20 A.
6 D2 passive Drain of P-channel MOSFET 2, tied to pin 5; pulsed drain current is rated -20 A.
7 D1 passive Drain of P-channel MOSFET 1, tied to pin 8; pulsed drain current is rated -20 A.
8 D1 passive Drain of P-channel MOSFET 1, tied to pin 7; pulsed drain current is rated -20 A.

Key specifications

Parameter Value
Manufacturer XNRUSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ -5.3 A TA=25℃, VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ -4.3 A TA=70℃, VGS @ 10V 1
Pulsed Drain Current IDM -20 A 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 100 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250µA 2
Gate-body Leakage current lGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -30V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) -1 -1.5 -2.1 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 35 60 mΩ VGS = -10V, ID = -4.1A 2
Drain-Source On-Resistance RDS(on) 52 90 mΩ VGS = -4.5V, ID = -3A 2
Diode Forward Voltage VSD -1.2 V IS = -1.7A, VGS = 0V 2
Continuous Source Current IS -5.3 A 2

CAD (KiCad official)

  • Symbol: XR4953A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: xr4953a-etched.step / xr4953a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xr4953a.step / xr4953a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XNRUSEMI datasheet (5 pp, sha256 ca9816a126aec163, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF