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XR4892S

Public Made by Adom

by adom

XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

markdown

XR4892S

XNRUSEMI · MOSFETs · SOP-8

XR4892S from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel); drain-source rated 100 V, continuous drain current 10 A at TA=25°C.
2 G1 input Gate of MOSFET 1; gate-source voltage limit ±20 V, threshold 1 V min to 3 V max at ID=250µA.
3 S2 passive Source of MOSFET 2 (N-channel); drain-source rated 100 V, continuous drain current 10 A at TA=25°C.
4 G2 input Gate of MOSFET 2; gate-source voltage limit ±20 V, threshold 1 V min to 3 V max at ID=250µA.
5 D2 passive Drain of MOSFET 2, tied internally with pin 6; VDS max 100 V, pulsed drain current 16 A.
6 D2 passive Drain of MOSFET 2, tied internally with pin 5; VDS max 100 V, pulsed drain current 16 A.
7 D1 passive Drain of MOSFET 1, tied internally with pin 8; VDS max 100 V, pulsed drain current 16 A.
8 D1 passive Drain of MOSFET 1, tied internally with pin 7; VDS max 100 V, pulsed drain current 16 A.

Key specifications

Parameter Value
Manufacturer XNRUSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 10 A TA=25°C 1
Continuous Drain Current ID 3.5 A TA=100°C 1
Pulsed Drain Current IDM 16 A 1
Single Pulse Avalanche Energy EAS 3.2 mJ 1
Total Power Dissipation PD 3.1 W TA=25°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Gate-Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 µA TJ=25°C, VDS =100V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 100 µA TJ=100°C, VDS =100V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) 1 1.7 3 V VDS = VGS, ID = 250µA 2
Drain-Source on-Resistance RDS(on) 68 100 mΩ VGS = 10V, ID = 4A 2
Drain-Source on-Resistance RDS(on) 78 110 mΩ VGS = 4.5V, ID = 2A 2
Diode Forward Voltage VSD 1.2 V IS = 1A, VGS = 0V 2
Continuous Source Current IS 10 A TA=25°C 2
Thermal Resistance from Junction-to-Ambient RθJA 40.3 °C/W 1

CAD (KiCad official)

  • Symbol: XR4892S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: xr4892s-etched.step / xr4892s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xr4892s.step / xr4892s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XNRUSEMI datasheet (5 pp, sha256 d562011100c67531, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF