component

XR4882

Public Made by Adom

by adom

XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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XR4882

XNRUSEMI · MOSFETs · SOP-8

XR4882 from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel); drain-source voltage rated 40V.
2 G1 input Gate of MOSFET 1; gate-source voltage limited to ±20V with threshold 1.0 to 2.5V.
3 S2 passive Source of MOSFET 2 (N-channel); drain-source voltage rated 40V.
4 G2 input Gate of MOSFET 2; gate-source voltage limited to ±20V with threshold 1.0 to 2.5V.
5 D2 passive Drain of MOSFET 2, tied internally with pin 6; continuous current 8.0A at TA=25℃.
6 D2 passive Drain of MOSFET 2, tied internally with pin 5; continuous current 8.0A at TA=25℃.
7 D1 passive Drain of MOSFET 1, tied internally with pin 8; continuous current 8.0A at TA=25℃.
8 D1 passive Drain of MOSFET 1, tied internally with pin 7; continuous current 8.0A at TA=25℃.

Key specifications

Parameter Value
Manufacturer XNRUSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 40 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 8 A TA = 25℃ 1
Continuous Drain Current ID 6 A TA = 100℃ 1
Pulsed Drain Current IDM 32.8 A 1
Single Pulsed Avalanche Energy EAS 13 mJ 1
Power Dissipation PD 2.9 W TA = 25℃ 1
Thermal Resistance, Junction to Ambient RθJA 63 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 40 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 17 22 mΩ VGS=10V, ID=8A 2
Static Drain-Source on-Resistance RDS(on) 25 35 mΩ VGS=4.5V, ID=5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 8 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 32 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS= 8A 2

CAD (KiCad official)

  • Symbol: XR4882
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: xr4882-etched.step / xr4882-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xr4882.step / xr4882.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XNRUSEMI datasheet (5 pp, sha256 abafd4aa9dec925f, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF