component
XR4614B
Public Made by Adomby adom
XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownXR4614B
XNRUSEMI · MOSFETs · SOP-8
XR4614B from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated 40 V VDS and 7.2 A continuous drain current. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with a gate-source voltage rating of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated -40 V VDS and -7.5 A continuous drain current. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with a gate-source voltage rating of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), rated -40 V drain-source with 38 mΩ typical RDS(on) at VGS=-10 V; internally tied to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), rated -40 V drain-source; internally tied to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), rated 40 V drain-source with 26 mΩ typical RDS(on) at VGS=10 V; internally tied to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), rated 40 V drain-source; internally tied to pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-ch) | V(BR)DSS | 40 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-ch) | IDSS | 1 | μA | VDS =40V, VGS=0V | 2 | ||
| Gate to Body Leakage Current (N-ch) | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage (N-ch) | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance (N-ch) | RDS(on) | 26 | 40 | mΩ | VGS=10V, ID=4A | 2 | |
| Static Drain-Source on-Resistance (N-ch) | RDS(on) | 35 | 60 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Drain to Source Diode Forward Voltage (N-ch) | VSD | 1.2 | V | VGS=0V, IS=5A | 2 | ||
| Maximum Continuous Drain to Source Diode Forward Current (N-ch) | IS | 7.2 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current (N-ch) | ISM | 20 | A | 2 | |||
| Drain-Source Breakdown Voltage (P-ch) | V(BR)DSS | -40 | V | VGS=0V, ID= -250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-ch) | IDSS | -1 | μA | VDS= -40V, VGS=0V | 3 | ||
| Gate to Body Leakage Current (P-ch) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage (P-ch) | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID= -250μA | 3 |
| Static Drain-Source on-Resistance (P-ch) | RDS(on) | 38 | 53 | mΩ | VGS= -10V, ID= -6A | 3 | |
| Static Drain-Source on-Resistance (P-ch) | RDS(on) | 58 | 81 | mΩ | VGS= -4.5V, ID= -4A | 3 | |
| Maximum Continuous Drain to Source Diode Forward Current (P-ch) | IS | -7.5 | A | 3 | |||
| Maximum Pulsed Drain to Source Diode Forward Current (P-ch) | ISM | -24 | A | 3 | |||
| Drain to Source Diode Forward Voltage (P-ch) | VSD | -1.2 | V | VGS=0V, IS= -6A | 3 | ||
| Drain-Source Voltage (N-ch) | VDS | 40 | V | 1 | |||
| Drain-Source Voltage (P-ch) | VDS | -40 | V | 1 | |||
| Gate-Source Voltage (N-ch) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-ch) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V (N-ch) | ID@TC=25℃ | 7.2 | A | TC=25℃ | 1 | ||
| Continuous Drain Current, VGS @ 10V (P-ch) | ID@TC=25℃ | -7.5 | A | TC=25℃ | 1 | ||
| Continuous Drain Current, VGS @ 10V (N-ch) | ID@TC=100℃ | 5.6 | A | TC=100℃ | 1 | ||
| Continuous Drain Current, VGS @ 10V (P-ch) | ID@TC=100℃ | -5.1 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current (N-ch) | IDM | 14.5 | A | 1 | |||
| Pulsed Drain Current (P-ch) | IDM | -13 | A | 1 | |||
| Single Pulse Avalanche Energy (N-ch) | EAS | 28 | mJ | 1 | |||
| Single Pulse Avalanche Energy (P-ch) | EAS | 66 | mJ | 1 | |||
| Avalanche Current (N-ch) | IAS | 17.8 | A | 1 | |||
| Avalanche Current (P-ch) | IAS | -27.2 | A | 1 | |||
| Total Power Dissipation (N-ch) | PD@TC=25℃ | 2.5 | W | TC=25℃ | 1 | ||
| Total Power Dissipation (P-ch) | PD@TC=25℃ | 3.1 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
XR4614B - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
xr4614b-etched.step/xr4614b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xr4614b.step/xr4614b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (8 pp, sha256
23c0a3ad45322618, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).