component
XR4559A
Public Made by Adomby adom
XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownXR4559A
XNRUSEMI · MOSFETs · SOP-8
XR4559A from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, 60V, 6.0A continuous at TA=25C). |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), VGS rated ±20V with threshold 1.0 to 2.5V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, -60V, -5.0A continuous at TA=25C). |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), VGS rated ±20V with threshold -1.0 to -2.5V. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), tied internally with pins 6; VDS rated -60V. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), tied internally with pin 5; VDS rated -60V. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), tied internally with pin 8; VDS rated 60V. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), tied internally with pin 7; VDS rated 60V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 60 | V | 1 | |||
| P-ch Drain-Source Voltage | VDS | -60 | V | 1 | |||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| N-ch Continuous Drain Current (TA=25℃) | ID@TA=25℃ | 6 | A | VGS @ 10V | 1 | ||
| N-ch Continuous Drain Current (TA=70℃) | ID@TA=70℃ | 4 | A | VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current (TA=25℃) | ID@TA=25℃ | -5 | A | VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current (TA=70℃) | ID@TA=70℃ | -3.5 | A | VGS @ 10V | 1 | ||
| N-ch Pulsed Drain Current | IDM | 11 | A | 1 | |||
| P-ch Pulsed Drain Current | IDM | -8.5 | A | 1 | |||
| N-ch Single Pulse Avalanche Energy | EAS | 22.5 | mJ | 1 | |||
| P-ch Single Pulse Avalanche Energy | EAS | 35.3 | mJ | 1 | |||
| N-ch Avalanche Current | IAS | 22.6 | A | 1 | |||
| P-ch Avalanche Current | IAS | -26.6 | A | 1 | |||
| N-ch Total Power Dissipation (TA=25℃) | PD@TA=25℃ | 2.5 | W | 1 | |||
| P-ch Total Power Dissipation (TA=25℃) | PD@TA=25℃ | 2.5 | W | 1 | |||
| N-ch Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| P-ch Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| N-ch Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| P-ch Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 62.5 | ℃/W | 1 | |||
| N-ch Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS = 0V | 2 | ||
| N-ch Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS = ±20V | 2 | |
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| N-ch Static Drain-Source on-Resistance (VGS=10V) | RDS(on) | 30 | 40 | mΩ | VGS=10V, ID=5A | 2 | |
| N-ch Static Drain-Source on-Resistance (VGS=4.5V) | RDS(on) | 36 | 50 | mΩ | VGS=4.5V, ID=3A | 2 | |
| N-ch Maximum Continuous Drain to Source Diode Forward Current | IS | 6 | A | 2 | |||
| N-ch Maximum Pulsed Drain to Source Diode Forward Current | ISM | 20 | A | 2 | |||
| N-ch Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=5A | 2 | ||
| P-ch Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V , ID=-250uA | 3 | ||
| P-ch Static Drain-Source On-Resistance (VGS=-10V) | RDS(ON) | 70 | 100 | mΩ | VGS=-10V , ID=-3.5A | 3 | |
| P-ch Static Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) | 100 | 115 | mΩ | VGS=-4.5V , ID=-3.1A | 3 | |
| P-ch Gate Threshold Voltage | VGS(th) | -2.5 | -1 | V | VGS=VDS , ID =-250uA | 3 | |
| P-ch Drain-Source Leakage Current (TJ=25℃) | IDSS | 1 | uA | VDS=-48V , VGS=0V , TJ=25℃ | 3 | ||
| P-ch Drain-Source Leakage Current (TJ=55℃) | IDSS | 5 | uA | VDS=-48V , VGS=0V , TJ=55℃ | 3 | ||
| P-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 3 | |
| P-ch Continuous Source Current | IS | -6 | A | VG=VD=0V , Force Current | 3 | ||
| P-ch Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
XR4559A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
xr4559a-etched.step/xr4559a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xr4559a.step/xr4559a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (8 pp, sha256
85fb7f2f05356a7b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).