component
XR4485
Public Made by Adomby adom
XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
XR4485
XNRUSEMI · MOSFETs · SOP-8
XR4485 from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; connected internally with pins 2 and 3. |
| 2 | S | passive | Source of the P-channel MOSFET; connected internally with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET; connected internally with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±20 V with threshold of -1.0 to -2.2 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated VDS -40 V and ID -13 A at TA=25°C; connected internally with pins 6-8. |
| 6 | D | passive | Drain of the P-channel MOSFET, rated VDS -40 V and ID -13 A at TA=25°C; connected internally with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, rated VDS -40 V and ID -13 A at TA=25°C; connected internally with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, rated VDS -40 V and ID -13 A at TA=25°C; connected internally with pins 5-7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | TA=25°C, unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C, unless otherwise noted | 1 | |
| Continuous Drain Current | ID | -13 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -8.5 | A | TA=100°C | 1 | ||
| Pulsed Drain Current | IDM | -52 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | VDD= -25V, VGS= -10V, L= 0.1mH, IAS= -34A (note 2) | 1 | ||
| Total Power Dissipation | PD | 3 | W | TA=25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance from Junction-to-Ambient | RθJA | 41 | °C/W | Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 3) | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS = 0V, ID = -250µA | 2 | ||
| Gate-body Leakage current | lGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | TJ=25℃; VDS = -40V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -100 | µA | TJ=100℃; VDS = -40V, VGS = 0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -1.5 | -2.2 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 14 | 19 | mΩ | VGS = -10V, ID = -10A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 19.5 | 25 | mΩ | VGS = -4.5V, ID = -5 A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS = -10A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | -13 | A | TC=25°C | 2 | ||
| Forward Transconductance | gfs | 44 | S | VDS = -10V, ID = -10A | 2 | ||
| Input Capacitance | Ciss | 2525 | pF | VDS = -20V, VGS =0V, f =1MHz | 2 | ||
| Output Capacitance | Coss | 190 | pF | VDS = -20V, VGS =0V, f =1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 172 | pF | VDS = -20V, VGS =0V, f =1MHz | 2 | ||
| Gate Resistance | Rg | 10 | Ω | f =1MHz | 2 | ||
| Total Gate Charge | Qg | 35 | nC | VGS = -10V, VDS = -20V, ID= -10A | 2 | ||
| Gate-Source Charge | Qgs | 5.5 | nC | VGS = -10V, VDS = -20V, ID= -10A | 2 | ||
| Gate-Drain Charge | Qgd | 8 | nC | VGS = -10V, VDS = -20V, ID= -10A | 2 | ||
| Turn-On Delay Time | td(on) | 14.5 | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 2 | ||
| Rise Time | tr | 20.2 | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 2 | ||
| Turn-Off Delay Time | td(off) | 32 | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 2 | ||
| Fall Time | tf | 10 | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 2 |
CAD (KiCad official)
- Symbol:
XR4485 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
xr4485-etched.step/xr4485-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xr4485.step/xr4485.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (6 pp, sha256
3279afc70931bca7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# XR4485
**XNRUSEMI** · MOSFETs · SOP-8
XR4485 from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; connected internally with pins 2 and 3. |
| 2 | S | passive | Source of the P-channel MOSFET; connected internally with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET; connected internally with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±20 V with threshold of -1.0 to -2.2 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated VDS -40 V and ID -13 A at TA=25°C; connected internally with pins 6-8. |
| 6 | D | passive | Drain of the P-channel MOSFET, rated VDS -40 V and ID -13 A at TA=25°C; connected internally with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, rated VDS -40 V and ID -13 A at TA=25°C; connected internally with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, rated VDS -40 V and ID -13 A at TA=25°C; connected internally with pins 5-7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | | | V | TA=25°C, unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25°C, unless otherwise noted | 1 |
| Continuous Drain Current | ID | -13 | | | A | TA=25°C | 1 |
| Continuous Drain Current | ID | -8.5 | | | A | TA=100°C | 1 |
| Pulsed Drain Current | IDM | -52 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 80 | mJ | VDD= -25V, VGS= -10V, L= 0.1mH, IAS= -34A (note 2) | 1 |
| Total Power Dissipation | PD | | | 3 | W | TA=25°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance from Junction-to-Ambient | RθJA | | 41 | | °C/W | Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 3) | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | | | V | VGS = 0V, ID = -250µA | 2 |
| Gate-body Leakage current | lGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | TJ=25℃; VDS = -40V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -100 | µA | TJ=100℃; VDS = -40V, VGS = 0V | 2 |
| Gate-Threshold Voltage | VGS(th) | -1 | -1.5 | -2.2 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 14 | 19 | mΩ | VGS = -10V, ID = -10A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 19.5 | 25 | mΩ | VGS = -4.5V, ID = -5 A | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | IS = -10A, VGS = 0V | 2 |
| Continuous Source Current | IS | | | -13 | A | TC=25°C | 2 |
| Forward Transconductance | gfs | | 44 | | S | VDS = -10V, ID = -10A | 2 |
| Input Capacitance | Ciss | | 2525 | | pF | VDS = -20V, VGS =0V, f =1MHz | 2 |
| Output Capacitance | Coss | | 190 | | pF | VDS = -20V, VGS =0V, f =1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 172 | | pF | VDS = -20V, VGS =0V, f =1MHz | 2 |
| Gate Resistance | Rg | | 10 | | Ω | f =1MHz | 2 |
| Total Gate Charge | Qg | | 35 | | nC | VGS = -10V, VDS = -20V, ID= -10A | 2 |
| Gate-Source Charge | Qgs | | 5.5 | | nC | VGS = -10V, VDS = -20V, ID= -10A | 2 |
| Gate-Drain Charge | Qgd | | 8 | | nC | VGS = -10V, VDS = -20V, ID= -10A | 2 |
| Turn-On Delay Time | td(on) | | 14.5 | | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 2 |
| Rise Time | tr | | 20.2 | | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 2 |
| Turn-Off Delay Time | td(off) | | 32 | | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 2 |
| Fall Time | tf | | 10 | | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 2 |
## CAD (KiCad official)
- Symbol: `XR4485`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `xr4485-etched.step` / `xr4485-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xr4485.step` / `xr4485.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [XNRUSEMI datasheet](docs/xr4485-datasheet.pdf) (6 pp, sha256 `3279afc70931bca7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/xr4485-datasheet.pdf)