component

XR4435B

Public Made by Adom

by adom

XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 8d ago
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package.json Publish 0.1.0 · Ray 8d ago
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README.md Publish 0.1.0 · Ray 8d ago
xr4435b-etched.glb Publish 0.1.0 · Ray 8d ago
xr4435b-etched.step xr4435b: factory component page (tier=lcsc) · Ray 8d ago
xr4435b-hero.glb xr4435b: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
xr4435b-hero.overlay.json Publish 0.1.0 · Ray 8d ago
xr4435b.glb Publish 0.1.0 · Ray 8d ago
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xr4435b.step Publish 0.1.0 · Ray 8d ago

XR4435B

XNRUSEMI · MOSFETs · SOP-8

XR4435B from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; drain-source voltage rating is -30 V and continuous drain current is -10 A at TA=25℃.
2 S passive Source of the P-channel MOSFET, connected in parallel with the other source pins.
3 S passive Source of the P-channel MOSFET, connected in parallel with the other source pins.
4 G input Gate of the P-channel MOSFET; maximum gate-source voltage is ±20 V with a threshold of -1.0 to -2.5 V.
5 D passive Drain of the P-channel MOSFET; pulsed drain current is -36 A maximum.
6 D passive Drain of the P-channel MOSFET, connected in parallel with the other drain pins.
7 D passive Drain of the P-channel MOSFET, connected in parallel with the other drain pins.
8 D passive Drain of the P-channel MOSFET, connected in parallel with the other drain pins.

Key specifications

Parameter Value
Manufacturer XNRUSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID -10 A TA= 25℃ 1
Continuous Drain Current ID -7 A TA = 100℃ 1
Pulsed Drain Current IDM -36 A 1
Single Pulsed Avalanche Energy EAS 25 mJ 1
Power Dissipation PD 3.5 W TA = 25℃ 1
Thermal Resistance, Junction to Ambient RθJA 48 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V,ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -30V, VGS = 0V, 2
Gate to Body Leakage Current IGSS -100 100 nA VDS =0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VDS= VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 15 20 mΩ VGS =-10V, ID =-9A 2
Static Drain-Source on-Resistance RDS(on) 20 30 mΩ VGS =-4.5V, ID =-5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -10 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -36 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -9A 2

CAD (KiCad official)

  • Symbol: XR4435B
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: xr4435b-etched.step / xr4435b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xr4435b.step / xr4435b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XNRUSEMI datasheet (6 pp, sha256 155472b49a986172, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF