component
XR4435A
Public Made by Adomby adom
XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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XR4435A
XNRUSEMI · MOSFETs · SOP-8
XR4435A from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; drain-source voltage rated -30 V and continuous drain current -11 A at TC=25°C. |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit ±20 V with threshold of -1.0 V to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET; drain-source voltage -30 V and pulsed drain current -44 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied internally with the other drain pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied internally with the other drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied internally with the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 20 | mΩ | VGS=-10V, ID=-15A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 32 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Continuous Source Current | IS | -11 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -22 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -11 | A | TC=25℃, VGS @ -10V (note 1) | 1 | ||
| Continuous Drain Current | ID | -6 | A | TC=100℃, VGS @ -10V (note 1) | 1 | ||
| Pulsed Drain Current | IDM | -44 | A | note 2 | 1 | ||
| Single Pulse Avalanche Energy | EAS | 37 | mJ | note 3 | 1 | ||
| Avalanche Current | IAS | -38 | A | 1 | |||
| Total Power Dissipation | PD | 14 | W | TC=25℃ (note 4) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 |
CAD (KiCad official)
- Symbol:
XR4435A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
xr4435a-etched.step/xr4435a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xr4435a.step/xr4435a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (5 pp, sha256
92efbb1e12ad36e7, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# XR4435A
**XNRUSEMI** · MOSFETs · SOP-8
XR4435A from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; drain-source voltage rated -30 V and continuous drain current -11 A at TC=25°C. |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit ±20 V with threshold of -1.0 V to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET; drain-source voltage -30 V and pulsed drain current -44 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied internally with the other drain pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied internally with the other drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied internally with the other drain pins. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 16 | 20 | mΩ | VGS=-10V, ID=-15A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 25 | 32 | mΩ | VGS=-4.5V, ID=-10A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -11 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -22 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -11 | | | A | TC=25℃, VGS @ -10V (note 1) | 1 |
| Continuous Drain Current | ID | -6 | | | A | TC=100℃, VGS @ -10V (note 1) | 1 |
| Pulsed Drain Current | IDM | -44 | | | A | note 2 | 1 |
| Single Pulse Avalanche Energy | EAS | | | 37 | mJ | note 3 | 1 |
| Avalanche Current | IAS | -38 | | | A | | 1 |
| Total Power Dissipation | PD | | | 14 | W | TC=25℃ (note 4) | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 75 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 |
## CAD (KiCad official)
- Symbol: `XR4435A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `xr4435a-etched.step` / `xr4435a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xr4435a.step` / `xr4435a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [XNRUSEMI datasheet](docs/xr4435a-datasheet.pdf) (5 pp, sha256 `92efbb1e12ad36e7`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/xr4435a-datasheet.pdf)