component
XR4420
Public Made by Adomby adom
XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| xr4420-etched.glb | 17d ago |
| xr4420-etched.step | 17d ago |
| xr4420-hero.glb | 17d ago |
| xr4420-hero.overlay.json | 17d ago |
| xr4420.glb | 17d ago |
| xr4420.kicad_mod | 17d ago |
| xr4420.kicad_sym | 17d ago |
| xr4420.lbr | 17d ago |
| xr4420.step | 17d ago |
XR4420
XNRUSEMI · MOSFETs · SOP-8
XR4420 from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to the other source pins; VDS max 30V and 20A continuous drain current at TC=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the other source pins; VDS max 30V and 20A continuous drain current at TC=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the other source pins; VDS max 30V and 20A continuous drain current at TC=25°C. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS absolute maximum ±20V with threshold of 1.0 to 2.5V at ID=250uA. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied to the other drain pins; VDS max 30V and RDS(ON) 5.5mΩ typ at VGS=10V. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to the other drain pins; VDS max 30V and RDS(ON) 5.5mΩ typ at VGS=10V. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to the other drain pins; VDS max 30V and RDS(ON) 5.5mΩ typ at VGS=10V. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to the other drain pins; VDS max 30V and RDS(ON) 5.5mΩ typ at VGS=10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 20 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 12.5 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Continuous Drain Current (10s) | ID | 7.5 | A | 10s, VGS @ 10V, TA=25℃ | 1 | ||
| Continuous Drain Current (steady state) | ID | 5.8 | A | Steady state, VGS @ 10V, TA=25℃ | 1 | ||
| Continuous Drain Current (10s) | ID | 6.3 | A | 10s, VGS @ 10V, TA=70℃ | 1 | ||
| Continuous Drain Current (steady state) | ID | 4 | A | Steady state, VGS @ 10V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 48 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 38 | mJ | 1 | |||
| Avalanche Current | IAS | 26.9 | A | 1 | |||
| Total Power Dissipation | PD | 62.5 | W | TC=25℃ | 1 | ||
| Total Power Dissipation (10s) | PD | 6 | W | 10s, TA=25℃ | 1 | ||
| Total Power Dissipation (steady state) | PD | 2.42 | W | Steady state, TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | 25 | ℃/W | t ≤10s, Note 1 | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.4 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 5.5 | 7 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9 | 11.5 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 1.4 | 2.8 | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Input Capacitance | Ciss | 3075 | 4000 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 400 | 530 | pF | 2 | ||
| Continuous Source Current | IS | 20 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 33 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
XR4420 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
xr4420-etched.step/xr4420-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xr4420.step/xr4420.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (5 pp, sha256
9956e2a4a951e492, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).