component

XR1P10

Public Made by Adom

by adom

XNRUSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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xr1p10-etched.step xr1p10: factory component page (tier=lcsc) · Ray 16d ago
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XR1P10

XNRUSEMI · MOSFETs · SOT-23

XR1P10 from XNRUSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA.
2 S passive Source of the P-channel MOSFET; continuous source (body diode) current is -0.9 A maximum.
3 D passive Drain; drain-source voltage is rated at -100 V with continuous drain current of -0.9 A at TA=25℃ and pulsed -1.8 A.

Key specifications

Parameter Value
Manufacturer XNRUSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ -0.9 A TA=25℃, VGS @ -10V 1
Continuous Drain Current ID@TA=70℃ -0.7 A TA=70℃, VGS @ -10V 1
Pulsed Drain Current IDM -1.8 A 1
Total Power Dissipation PD@TA=25℃ 1 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-Case RθJC 80 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 0.52 0.65 Ω VGS=-10V, ID=-0.8A 2
Static Drain-Source On-Resistance RDS(ON) 0.56 0.7 Ω VGS=-4.5V, ID=-0.4A 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 10 uA VDS=-80V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=-80V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 16 32 VDS=0V, VGS=0V, f=1MHz 2
Continuous Source Current IS -0.9 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -1.8 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: XR1P10
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: xr1p10-etched.step / xr1p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xr1p10.step / xr1p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XNRUSEMI datasheet (5 pp, sha256 538e62bc8a667fdf, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF