# XPH3R114MC

**TOSHIBA** · MOSFETs · SOP-8

XPH3R114MC from TOSHIBA, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal (pins 1, 2, 3 are all Source) of the P-channel MOSFET with VDSS of -40 V. |
| 2 | Source | passive | Source terminal (pins 1, 2, 3 are all Source) of the P-channel MOSFET with VDSS of -40 V. |
| 3 | Source | passive | Source terminal (pins 1, 2, 3 are all Source) of the P-channel MOSFET with VDSS of -40 V. |
| 4 | Gate | input | Gate terminal with gate-source voltage rating of +10/-20 V and threshold voltage Vth of -1.0 to -2.1 V. |
| 5 | Drain | passive | Drain terminal (pins 5, 6, 7, 8 are all Drain) with DC drain current of -100 A max. |
| 6 | Drain | passive | Drain terminal (pins 5, 6, 7, 8 are all Drain) with DC drain current of -100 A max. |
| 7 | Drain | passive | Drain terminal (pins 5, 6, 7, 8 are all Drain) with DC drain current of -100 A max. |
| 8 | Drain | passive | Drain terminal (pins 5, 6, 7, 8 are all Drain) with DC drain current of -100 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | -40 | V | Ta = 25 °C | 2 |
| Gate-source voltage | VGSS | -20 |  | 10 | V | +10/-20 V | 2 |
| Drain current (DC) | ID |  |  | -100 | A | Tc = 25 °C | 2 |
| Drain current (pulsed) | IDP |  |  | -200 | A |  | 2 |
| Single-pulse avalanche energy | EAS |  |  | 173 | mJ | VDD = -25 V, Tch = 25 °C (initial), L = 18 µH, RG = 25 Ω, IAS = -100 A, VGS = 0/-15 V | 2 |
| Single-pulse avalanche current | IAS |  |  | -100 | A |  | 2 |
| Channel temperature | Tch |  |  | 175 | °C |  | 2 |
| Storage temperature | Tstg | -55 |  | 175 | °C |  | 2 |
| Power dissipation | PD |  |  | 3 | W | t = 10 s, Note 2 | 2 |
| Power dissipation | PD |  |  | 0.96 | W | t = 10 s, Note 3 | 2 |
| Channel-to-case thermal impedance | zth(ch-c) |  |  | 0.88 | °C/W | Tc = 25 °C | 2 |
| Channel-to-ambient thermal impedance | zth(ch-a) |  |  | 50 | °C/W | t = 10 s, Note 2 | 2 |
| Channel-to-ambient thermal impedance | zth(ch-a) |  |  | 156 | °C/W | t = 10 s, Note 3 | 2 |
| Gate leakage current | IGSS | -1 |  | 1 | µA | VGS = +10/-20 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | -10 | µA | VDS = -40 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -40 |  |  | V | ID = -10 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSX | -30 |  |  | V | ID = -10 mA, VGS = 10 V | 3 |
| Gate threshold voltage | Vth | -1 |  | -2.1 | V | VDS = -10 V, ID = -1.0 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 3.1 | 4.7 | mΩ | VGS = -4.5 V, ID = -50 A | 3 |
| Drain-source on-resistance | RDS(ON) |  | 2.4 | 3.1 | mΩ | VGS = -10 V, ID = -50 A | 3 |
| Gate resistance | rg |  | 13 | 26 | Ω | VDS = -10 V, VGS = 0 V, f = 300 kHz | 3 |
| Reverse drain current (DC) | IDR |  |  | -100 | A |  | 3 |
| Reverse drain current (pulsed) | IDRP |  |  | -200 | A |  | 3 |
| Diode forward voltage | VDSF |  |  | 1.2 | V | IDR = -100 A, VGS = 0 V | 3 |
| Input capacitance | Ciss |  | 9500 |  | pF | VDS = -10 V, VGS = 0 V, f = 300 kHz | 3 |
| Reverse transfer capacitance | Crss |  | 1110 |  | pF | VDS = -10 V, VGS = 0 V, f = 300 kHz | 3 |
| Output capacitance | Coss |  | 1250 |  | pF | VDS = -10 V, VGS = 0 V, f = 300 kHz | 3 |
| Switching time (rise time) | tr |  | 125 |  | ns | See Fig. 6.2.1 | 3 |
| Switching time (turn-on time) | ton |  | 140 |  | ns | See Fig. 6.2.1 | 3 |
| Switching time (fall time) | tf |  | 565 |  | ns | See Fig. 6.2.1 | 3 |
| Switching time (turn-off time) | toff |  | 1900 |  | ns | See Fig. 6.2.1 | 3 |
| Total gate charge | Qg |  | 230 |  | nC | VDD ≈ -32 V, VGS = -10 V, ID = -100 A | 3 |
| Gate-source charge 1 | Qgs1 |  | 29 |  | nC | VDD ≈ -32 V, VGS = -10 V, ID = -100 A | 3 |
| Gate-drain charge | Qgd |  | 58 |  | nC | VDD ≈ -32 V, VGS = -10 V, ID = -100 A | 3 |

## CAD (KiCad official)

- Symbol: `XPH3R114MC`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `xph3r114mc-etched.step` / `xph3r114mc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xph3r114mc.step` / `xph3r114mc.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](docs/xph3r114mc-datasheet.pdf) (10 pp, sha256 `b55bcc536620c0b4`, retrieved 2026-10-24, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/xph3r114mc-datasheet.pdf)