component
XP231P0201TR-G
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Torex Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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XP231P0201TR-G
Torex Semicon · MOSFETs · SOT-23
XP231P0201TR-G from Torex Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, driven from -2.5V and limited to a gate-source voltage of ±8V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, with the body diode forward voltage of -0.8V typ (-1.2V max) at IS=-100mA. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for VDSS of -30V and a DC drain current of -0.2A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Torex Semicon |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | ID= -250μA, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | -10 | μA | VDS= -30V, VGS= 0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -10 | 10 | μA | VGS= ±8V, VDS= 0V | 2 | |
| Gate Threshold Voltage | VGS(off) | -0.5 | -0.8 | -1.2 | V | ID= -250uA, VDS= VGS | 2 |
| Drain-Source On Resistance | RDS(on) | 3.2 | 5 | Ω | VGS= -4.5V, ID= -100mA | 2 | |
| Drain-Source On Resistance | RDS(on) | 4 | 8 | Ω | VGS= -2.5V, ID= -100mA | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | IS= -100mA, VGS= 0V | 2 | |
| Drain-Source Voltage | VDSS | -30 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -8 | 8 | V | Ta=25℃ | 1 | |
| Drain Current (DC) | ID | -0.2 | A | Ta=25℃ | 1 | ||
| Drain Current (Pulse) | IDP | -0.4 | A | PW≦10μs,duty cycle≦1% | 1 | ||
| Channel Power Dissipation | Pd | 0.4 | W | When implemented on a PCB defined by JESD51-7 | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Input Capacitance | Ciss | 34 | pF | VDS= -10V, VGS= 0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 7 | pF | VDS= -10V, VGS= 0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 2.5 | pF | VDS= -10V, VGS= 0V, f=1MHz | 2 | ||
| Turn-on Delay Time | td(on) | 18 | ns | VDD= -10V, ID= -100mA, VGS= -4.5V | 2 | ||
| Rise Time | tr | 20 | ns | VDD= -10V, ID= -100mA, VGS= -4.5V | 2 | ||
| Turn-off Delay Time | td(off) | 100 | ns | VDD= -10V, ID= -100mA, VGS= -4.5V | 2 | ||
| Fall Time | tf | 45 | ns | VDD= -10V, ID= -100mA, VGS= -4.5V | 2 |
CAD (KiCad official)
- Symbol:
XP231P0201TR-G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
xp231p0201tr-g-etched.step/xp231p0201tr-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xp231p0201tr-g.step/xp231p0201tr-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Torex Semicon datasheet (6 pp, sha256
4b79480418c550ab, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# XP231P0201TR-G
**Torex Semicon** · MOSFETs · SOT-23
XP231P0201TR-G from Torex Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, driven from -2.5V and limited to a gate-source voltage of ±8V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, with the body diode forward voltage of -0.8V typ (-1.2V max) at IS=-100mA. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for VDSS of -30V and a DC drain current of -0.2A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Torex Semicon |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | ID= -250μA, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS | | | -10 | μA | VDS= -30V, VGS= 0V | 2 |
| Gate-Source Leakage Current | IGSS | -10 | | 10 | μA | VGS= ±8V, VDS= 0V | 2 |
| Gate Threshold Voltage | VGS(off) | -0.5 | -0.8 | -1.2 | V | ID= -250uA, VDS= VGS | 2 |
| Drain-Source On Resistance | RDS(on) | | 3.2 | 5 | Ω | VGS= -4.5V, ID= -100mA | 2 |
| Drain-Source On Resistance | RDS(on) | | 4 | 8 | Ω | VGS= -2.5V, ID= -100mA | 2 |
| Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | IS= -100mA, VGS= 0V | 2 |
| Drain-Source Voltage | VDSS | | | -30 | V | Ta=25℃ | 1 |
| Gate-Source Voltage | VGSS | -8 | | 8 | V | Ta=25℃ | 1 |
| Drain Current (DC) | ID | | | -0.2 | A | Ta=25℃ | 1 |
| Drain Current (Pulse) | IDP | | | -0.4 | A | PW≦10μs,duty cycle≦1% | 1 |
| Channel Power Dissipation | Pd | | | 0.4 | W | When implemented on a PCB defined by JESD51-7 | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Input Capacitance | Ciss | | 34 | | pF | VDS= -10V, VGS= 0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 7 | | pF | VDS= -10V, VGS= 0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 2.5 | | pF | VDS= -10V, VGS= 0V, f=1MHz | 2 |
| Turn-on Delay Time | td(on) | | 18 | | ns | VDD= -10V, ID= -100mA, VGS= -4.5V | 2 |
| Rise Time | tr | | 20 | | ns | VDD= -10V, ID= -100mA, VGS= -4.5V | 2 |
| Turn-off Delay Time | td(off) | | 100 | | ns | VDD= -10V, ID= -100mA, VGS= -4.5V | 2 |
| Fall Time | tf | | 45 | | ns | VDD= -10V, ID= -100mA, VGS= -4.5V | 2 |
## CAD (KiCad official)
- Symbol: `XP231P0201TR-G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `xp231p0201tr-g-etched.step` / `xp231p0201tr-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xp231p0201tr-g.step` / `xp231p0201tr-g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Torex Semicon datasheet](docs/xp231p0201tr-g-datasheet.pdf) (6 pp, sha256 `4b79480418c550ab`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/xp231p0201tr-g-datasheet.pdf)