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Contents

README

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XP161A1355PR-VB

VBsemi Elec · MOSFETs · SOT-89

XP161A1355PR-VB from VBsemi Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with VGS rated to ±20 V and a threshold of 0.6 to 1.5 V at ID = 250 µA.
2 D passive Drain, which is also the exposed tab, with VDS rated to 30 V and continuous ID of 6.8 A at TC = 25 °C.
3 S passive Source of the N-channel MOSFET, with continuous source-drain diode current of 5.2 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.6 1.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 30 A VDS ≥ 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.022 Ω VGS = 4.5 V, ID = 6.3 A 2
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = 2.5 V, ID = 4.5 A 2
Total Gate Charge Qg 22 33 nC VDS = 10 V, VGS = 10 V, ID = 6.3 A 2
Total Gate Charge Qg 10 15 nC VDS = 10 V, VGS = 4.5 V, ID = 6.3 A 2
Turn-on Delay Time td(on) 15 25 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 10 15 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 35 55 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 12 20 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-on Delay Time td(on) 10 15 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 12 20 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 25 40 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 5.2 A TC = 25 °C 2
Pulse Diode Forward Current ISM 30 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 6.7 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 20 40 ns IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 10 20 nC IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 6.8 A TJ = 150 °C, TC = 25 °C 1
Pulsed Drain Current IDM 30 A TA = 25 °C 1
Maximum Power Dissipation PD 6.3 W TC = 25 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C, b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Peak Temperature 260 °C e, f 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 15 20 °C/W Steady State 1
VDS Temperature Coefficient ΔVDS/TJ 25 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -4 mV/°C ID = 250 µA 2
Forward Transconductance gfs 45 S VDS = 10 V, ID = 6.3 A 2
Input Capacitance Ciss 1200 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 220 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 100 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Gate Resistance Rg 2.4 Ω f = 1 MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result 1

CAD (KiCad official)

  • Symbol: XP161A1355PR-VB
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: xp161a1355pr-vb-etched.step / xp161a1355pr-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xp161a1355pr-vb.step / xp161a1355pr-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 ed3b5c45d00e934b, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF