component
XB8886G
Public Made by Adomby adom
XySemi Battery Management ICs, ESOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
| xb8886g-etched.glb | 12d ago |
| xb8886g-etched.step | 12d ago |
| xb8886g-hero.glb | 12d ago |
| xb8886g-hero.overlay.json | 12d ago |
| xb8886g.glb | 12d ago |
| xb8886g.kicad_mod | 12d ago |
| xb8886g.kicad_sym | 12d ago |
| xb8886g.lbr | 12d ago |
| xb8886g.step | 12d ago |
XB8886G
XySemi · Battery Management ICs · ESOP-8
XB8886G from XySemi, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VM | input | Negative terminal of the battery pack; the internal FET switch connects this terminal to GND. VM input pin voltage is rated -6 to 10 V (absolute maximum). |
| 2 | VM | input | Negative terminal of the battery pack; the internal FET switch connects this terminal to GND. VM input pin voltage is rated -6 to 10 V (absolute maximum). |
| 3 | VM | input | Negative terminal of the battery pack; the internal FET switch connects this terminal to GND. VM input pin voltage is rated -6 to 10 V (absolute maximum). |
| 4 | VM | input | Negative terminal of the battery pack; the internal FET switch connects this terminal to GND. VM input pin voltage is rated -6 to 10 V (absolute maximum). |
| 5 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 6 | VDD | power_in | Power supply pin; VDD input pin voltage is rated -0.3 to 6 V (absolute maximum). |
| 7 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 8 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 9 | EPAD | power_in | Exposed pad; must connect with GND of the XB8886G by mass metal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XySemi |
| Package | ESOP-8 |
| Category | Power Management ICs |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Overcharge Detection Voltage | VCU | 4.375 | 4.425 | 4.475 | V | 3 | |
| Overcharge Release Voltage | VCL | 4.2 | 4.25 | 4.3 | V | 3 | |
| Overdischarge Detection Voltage | VDL | 2.3 | 2.4 | 2.5 | V | 3 | |
| Overdischarge Release Voltage | VDR | 2.9 | 3 | 3.1 | V | 3 | |
| Overdischarge Current1 Detection | IOV1 | 10.5 | 15 | 19.5 | A | VDD=3.6V | 3 |
| Overdischarge Current1 Recovery | IROV1 | 30 | 50 | 80 | uA | VDD=3.6V | 3 |
| Overcharge Current Detection | ICHOC | 10 | 14 | 18 | A | VDD=3.6V | 3 |
| Load Short-Circuiting Detection Current | ISHORT | 30 | 60 | 80 | A | VDD=3.6V | 3 |
| Current Consumption in Normal Operation | IOPE | 7.8 | 13 | uA | VDD=3.6V, VM=0V | 3 | |
| Current Consumption in Power Down | IPDN | 4.5 | 7 | uA | VDD=2.0V, VM pin floating | 3 | |
| Internal Resistance between VM and VDD | RVMD | 100 | 150 | 200 | kOhm | VDD=2.0V, VM pin floating | 3 |
| Internal Resistance between VM and GND | RVMS | 7 | 12 | 18 | kOhm | VDD=3.6V, VM=1.0V | 3 |
| Equivalent FET on Resistance | RSS(ON) | 7 | 8.5 | 9 | mOhm | VDD=3.6V, IVM=1.0A | 3 |
| Overcharge Voltage Detection Delay Time | tCU | 80 | 130 | 180 | mS | 4 | |
| Overdischarge Voltage Detection Delay Time | tDL | 20 | 40 | 60 | mS | 4 | |
| Overdischarge Current Detection Delay Time | tIOV | 5 | 10 | 20 | mS | VDD=3.6V | 4 |
| Overcharge Current Detection Delay Time | tCHOC | 5 | 10 | 20 | mS | VDD=3.6V | 4 |
| Load Short-Circuiting Detection Delay Time | tSHORT | 180 | 380 | 600 | uS | VDD=3.6V | 4 |
| Over Temperature Protection | TSHD+ | 150 | oC | 4 | |||
| Over Temperature Recovery Degree | TSHD- | 110 | oC | 4 | |||
| VDD input pin voltage | VDD | -0.3 | 6 | V | 2 | ||
| VM input pin voltage | VM | -6 | 10 | V | 2 | ||
| Operating Ambient Temperature | -40 | 85 | °C | 2 | |||
| Maximum Junction Temperature | 150 | °C | 3 | ||||
| Storage Temperature | -55 | 150 | °C | 3 | |||
| Lead Temperature (Soldering) | 300 | °C | Soldering, 10 sec | 3 | |||
| Power Dissipation at T=25°C | 0.625 | W | T=25°C | 3 | |||
| Package Thermal Resistance (Junction to Ambient) | θJA | 250 | °C/W | 3 | |||
| Package Thermal Resistance (Junction to Case) | θJC | 130 | °C/W | 3 | |||
| ESD | 2000 | V | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | ppa | affecting the human body, such as exercise equipment ,medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, | 12 |
CAD (KiCad official)
- Symbol:
XB8886G - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm - 3D model: ESOP-8 (KiCad packages3D, STEP)
- 3D model files:
xb8886g-etched.step/xb8886g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xb8886g.step/xb8886g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XySemi datasheet (12 pp, sha256
5391def5ad1765b2, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).