component
XB8608AFJ
Public Made by Adomby adom
XySemi Battery Management, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
XB8608AFJ
XySemi · Battery Management · SOP-8
XB8608AFJ from XySemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VM | input | Negative terminal of the battery pack, connected to GND through the internal FET switch; the VM input pin is rated -6 to 10 V. |
| 2 | VM | input | Negative terminal of the battery pack, connected to GND through the internal FET switch; the VM input pin is rated -6 to 10 V. |
| 3 | VM | input | Negative terminal of the battery pack, connected to GND through the internal FET switch; the VM input pin is rated -6 to 10 V. |
| 4 | NC | unconnected | No connect. |
| 5 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 6 | VDD | power_in | Power supply pin; the VDD input pin voltage is rated -0.3 to 6 V absolute maximum. |
| 7 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 8 | GND | power_in | Ground; connect to the negative terminal of the battery. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XySemi |
| Package | SOP-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD input pin voltage | -0.3 | 6 | V | 2 | |||
| VM input pin voltage | -6 | 10 | V | 2 | |||
| Operating Ambient Temperature | -40 | 85 | °C | 2 | |||
| Maximum Junction Temperature | 150 | °C | 3 | ||||
| Storage Temperature | -55 | 150 | °C | 3 | |||
| Lead Temperature (Soldering, 10 sec) | 300 | °C | Soldering, 10 sec | 3 | |||
| Power Dissipation at T=25°C | 0.625 | W | T=25°C | 3 | |||
| Overcharge Detection Voltage | VCU | 4.25 | 4.3 | 4.35 | V | 3 | |
| Overcharge Release Voltage | VCL | 4.05 | 4.1 | 4.15 | V | 3 | |
| Overdischarge Detection Voltage | VDL | 2.3 | 2.4 | 2.5 | V | 3 | |
| Overdischarge Release Voltage | VDR | 2.9 | 3 | 3.1 | V | 3 | |
| Overdischarge Current Detection | IOV1 | 6 | 9 | 12 | A | VDD=3.6V | 3 |
| Overdischarge Current Recovery | IROV1 | 15 | 25 | 40 | uA | VDD=3.6V | 3 |
| Overcharge Current Detection | ICHOC | 5 | 7 | 9 | A | VDD=3.6V | 3 |
| Load Short-Circuiting Detection Current | ISHORT | 20 | 40 | 60 | A | VDD=3.6V | 3 |
| Current Consumption in Normal Operation | IOPE | 3.9 | 6 | μA | VDD=3.5V, VM=0V | 3 | |
| Current Consumption in Power Down | IPDN | 2.2 | 3 | μA | VDD=2.0V, VM pin floating | 3 | |
| Internal Resistance between VM and VDD | RVMD | 200 | 300 | 400 | kΩ | VDD=2.0V, VM pin floating | 3 |
| Internal Resistance between VM and GND | RVMS | 15 | 25 | 35 | kΩ | VDD=3.6V, VM=1.0V | 3 |
| Equivalent FET on Resistance | RSS(ON) | 14 | 16 | 19.5 | mΩ | VDD=3.6V, IVM=1.0A | 3 |
| Overcharge Voltage Detection Delay Time | tCU | 80 | 130 | 180 | mS | 4 | |
| Overdischarge Voltage Detection Delay Time | tDL | 20 | 40 | 60 | mS | 4 | |
| Overdischarge Current 1 Detection Delay Time | tIOV1 | 5 | 10 | 20 | mS | VDD=3.6V | 4 |
| Overcharge Current Detection Delay Time | tCHOC | 5 | 10 | 20 | mS | VDD=3.6V | 4 |
| Load Short-Circuiting Detection Delay Time | tSHORT | 180 | 380 | 600 | uS | VDD=3.6V | 4 |
| Package Thermal Resistance (Junction to Ambient) | θJA | 250 | °C/W | Junction to ambient; single printed value, no min/max column | 3 | ||
| Package Thermal Resistance (Junction to Case) | θJC | 130 | °C/W | Junction to case; single printed value, no min/max column | 3 | ||
| ESD | 2000 | V | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | ppa | affecting the human body, such as exercise equipment ,medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, | 12 |
CAD (KiCad official)
- Symbol:
XB8608AFJ - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
xb8608afj-etched.step/xb8608afj-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xb8608afj.step/xb8608afj.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XySemi datasheet (12 pp, sha256
659504c3aa3cf52d, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# XB8608AFJ
**XySemi** · Battery Management · SOP-8
XB8608AFJ from XySemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VM | input | Negative terminal of the battery pack, connected to GND through the internal FET switch; the VM input pin is rated -6 to 10 V. |
| 2 | VM | input | Negative terminal of the battery pack, connected to GND through the internal FET switch; the VM input pin is rated -6 to 10 V. |
| 3 | VM | input | Negative terminal of the battery pack, connected to GND through the internal FET switch; the VM input pin is rated -6 to 10 V. |
| 4 | NC | unconnected | No connect. |
| 5 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 6 | VDD | power_in | Power supply pin; the VDD input pin voltage is rated -0.3 to 6 V absolute maximum. |
| 7 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 8 | GND | power_in | Ground; connect to the negative terminal of the battery. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XySemi |
| Package | SOP-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD input pin voltage | | -0.3 | | 6 | V | | 2 |
| VM input pin voltage | | -6 | | 10 | V | | 2 |
| Operating Ambient Temperature | | -40 | | 85 | °C | | 2 |
| Maximum Junction Temperature | | | | 150 | °C | | 3 |
| Storage Temperature | | -55 | | 150 | °C | | 3 |
| Lead Temperature (Soldering, 10 sec) | | | | 300 | °C | Soldering, 10 sec | 3 |
| Power Dissipation at T=25°C | | | | 0.625 | W | T=25°C | 3 |
| Overcharge Detection Voltage | VCU | 4.25 | 4.3 | 4.35 | V | | 3 |
| Overcharge Release Voltage | VCL | 4.05 | 4.1 | 4.15 | V | | 3 |
| Overdischarge Detection Voltage | VDL | 2.3 | 2.4 | 2.5 | V | | 3 |
| Overdischarge Release Voltage | VDR | 2.9 | 3 | 3.1 | V | | 3 |
| Overdischarge Current Detection | IOV1 | 6 | 9 | 12 | A | VDD=3.6V | 3 |
| Overdischarge Current Recovery | IROV1 | 15 | 25 | 40 | uA | VDD=3.6V | 3 |
| Overcharge Current Detection | ICHOC | 5 | 7 | 9 | A | VDD=3.6V | 3 |
| Load Short-Circuiting Detection Current | ISHORT | 20 | 40 | 60 | A | VDD=3.6V | 3 |
| Current Consumption in Normal Operation | IOPE | | 3.9 | 6 | μA | VDD=3.5V, VM=0V | 3 |
| Current Consumption in Power Down | IPDN | | 2.2 | 3 | μA | VDD=2.0V, VM pin floating | 3 |
| Internal Resistance between VM and VDD | RVMD | 200 | 300 | 400 | kΩ | VDD=2.0V, VM pin floating | 3 |
| Internal Resistance between VM and GND | RVMS | 15 | 25 | 35 | kΩ | VDD=3.6V, VM=1.0V | 3 |
| Equivalent FET on Resistance | RSS(ON) | 14 | 16 | 19.5 | mΩ | VDD=3.6V, IVM=1.0A | 3 |
| Overcharge Voltage Detection Delay Time | tCU | 80 | 130 | 180 | mS | | 4 |
| Overdischarge Voltage Detection Delay Time | tDL | 20 | 40 | 60 | mS | | 4 |
| Overdischarge Current 1 Detection Delay Time | tIOV1 | 5 | 10 | 20 | mS | VDD=3.6V | 4 |
| Overcharge Current Detection Delay Time | tCHOC | 5 | 10 | 20 | mS | VDD=3.6V | 4 |
| Load Short-Circuiting Detection Delay Time | tSHORT | 180 | 380 | 600 | uS | VDD=3.6V | 4 |
| Package Thermal Resistance (Junction to Ambient) | θJA | | 250 | | °C/W | Junction to ambient; single printed value, no min/max column | 3 |
| Package Thermal Resistance (Junction to Case) | θJC | | 130 | | °C/W | Junction to case; single printed value, no min/max column | 3 |
| ESD | | | 2000 | | V | | 3 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | ppa | | affecting the human body, such as exercise equipment ,medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, | 12 |
## CAD (KiCad official)
- Symbol: `XB8608AFJ`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `xb8608afj-etched.step` / `xb8608afj-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xb8608afj.step` / `xb8608afj.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [XySemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904126062845953) (12 pp, sha256 `659504c3aa3cf52d`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/xb8608afj-datasheet.pdf)