component
XB8089A0
Public Made by Adomby adom
XySemi Battery Management, ESOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownXB8089A0
XySemi · Battery Management · ESOP-8
XB8089A0 from XySemi, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VM | input | Negative terminal of the battery pack; the internal FET switch connects this terminal to GND. |
| 2 | VM | input | Negative terminal of the battery pack; the internal FET switch connects this terminal to GND. |
| 3 | VM | input | Negative terminal of the battery pack; the internal FET switch connects this terminal to GND. |
| 4 | VM | input | Negative terminal of the battery pack; the internal FET switch connects this terminal to GND. |
| 5 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 6 | VDD | power_in | Power supply input; the datasheet's absolute maximum VDD input pin voltage is -0.3 to 6 V. |
| 7 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 8 | GND | power_in | Ground; connect to the negative terminal of the battery. |
| 9 | EPAD | power_in | Exposed pad; connect to the GND of the XB8089A0, and ensure sufficient ground PCB copper to dissipate heat. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XySemi |
| Package | ESOP-8 |
| Category | Power Management (PMIC) |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Overcharge Detection Voltage | VCU | 4.25 | 4.3 | 4.35 | V | 3 | |
| Overcharge Release Voltage | VCL | 4.05 | 4.1 | 4.15 | V | 3 | |
| Overdischarge Detection Voltage | VDL | 2.4 | 2.5 | 2.6 | V | 3 | |
| Overdischarge Release Voltage | VDR | 2.9 | 3 | 3.1 | V | 3 | |
| Current Consumption in Normal Operation | IOPE | 6 | 12 | μA | VDD=3.6V, VM=0V | 3 | |
| Current Consumption in Power Down | IPDN | 3 | 6 | μA | VDD=2.0V, VM pin floating | 3 | |
| Overcharge Voltage Detection Delay Time | tCU | 130 | 200 | mS | 4 | ||
| Overdischarge Voltage Detection Delay Time | tDL | 40 | 60 | mS | 4 | ||
| VDD input pin voltage | VDD | -0.3 | 6 | V | 2 | ||
| VM input pin voltage | VM | -6 | 10 | V | 2 | ||
| Operating Ambient Temperature | -40 | 85 | °C | 2 | |||
| Maximum Junction Temperature | 125 | °C | 3 | ||||
| Storage Temperature | -55 | 150 | °C | 3 | |||
| Lead Temperature (Soldering) | 300 | °C | Soldering, 10 sec | 3 | |||
| Power Dissipation | 0.625 | W | T=25°C | 3 | |||
| ESD | 2000 | V | 3 | ||||
| Package Thermal Resistance (Junction to Ambient) | θJA | 250 | °C/W | Junction to Ambient | 3 | ||
| Package Thermal Resistance (Junction to Case) | θJC | 130 | °C/W | Junction to Case | 3 | ||
| Equivalent FET on Resistance | RSS(ON) | 20 | mΩ | VDD=3.6V, IVM=1.0A | 3 |
CAD (KiCad official)
- Symbol:
XB8089A0 - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm - 3D model: ESOP-8 (KiCad packages3D, STEP)
- 3D model files:
xb8089a0-etched.step/xb8089a0-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xb8089a0.step/xb8089a0.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XySemi datasheet (12 pp, sha256
648cd581b4fdc346, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).