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Contents

README

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XB5556G

XySemi · Battery Management · SOT-23-5

XB5556G from XySemi, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VT unconnected Test pin for vendor use only; not used by the application.
2 GND power_in Ground; connect this pin to the negative terminal of the battery.
3 VDD power_in Power supply pin; the absolute maximum VDD input pin voltage is -0.3 V to 6 V.
4 VM passive Negative terminal of the battery pack, connected to GND through the internal FET switch; the absolute maximum VM input pin voltage is -6 V to 10 V.
5 VM passive Negative terminal of the battery pack, connected to GND through the internal FET switch; the absolute maximum VM input pin voltage is -6 V to 10 V.

Key specifications

Parameter Value
Manufacturer XySemi
Package SOT-23-5
Category Power Management (PMIC)
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD input pin voltage -0.3 6 V 2
VM input pin voltage -6 10 V 2
Operating Ambient Temperature -40 85 °C 2
Maximum Junction Temperature 125 °C 3
Storage Temperature -55 150 °C 3
Lead Temperature (Soldering, 10 sec) 300 °C Soldering, 10 sec 3
Power Dissipation at T=25°C 0.4 W T=25°C 3
ESD 2000 V 3
Overcharge Detection Voltage VCU 4.375 4.425 4.475 V 3
Overcharge Release Voltage VCL 4.2 4.25 4.3 V 3
Overdischarge Detection Voltage VDL 2.3 2.4 2.5 V 3
Overdischarge Release Voltage VDR 2.9 3 3.1 V 3
Overdischarge Current1 Detection IOV1 3.5 5 6.5 A VDD=3.6V 3
Load Short-Circuiting Detection ISHORT 10 20 30 A VDD=3.6V 3
Current Consumption in Normal Operation IOPE 2.8 6 μA VDD=3.6V VM=0V 3
Current Consumption in Power Down IPDN 1.5 3 μA VDD=2.0V VM pin floating 3
Internal Resistance between VM and VDD RVMD 200 300 400 kΩ VDD=2.0V VM pin floating 3
Internal Resistance between VM and GND RVMS 10 20 30 kΩ VDD=3.6V VM=1.0V 3
Equivalent FET on Resistance RSS(ON) 33 37 44 mΩ VDD=3.6V IVM =1.0A 3
Equivalent FET on Resistance RSS(ON) 32 35 42 mΩ VDD=4.2V IVM =1.0A 3
Overcharge Voltage Detection Delay Time tCU 80 130 200 mS 4
Overdischarge Voltage Detection Delay Time tDL 20 40 60 mS 4
Overdischarge Current Detection Delay Time tIOV 4 8 16 mS VDD=3.6V 4
Load Short-Circuiting Detection Delay Time tSHORT 80 180 300 uS VDD=3.6V 4
Thermal resistance, Junction to Ambient θJA 250 °C/W 3
Thermal resistance, Junction to Case θJC 130 °C/W 3
Maxim continue discharge current Imax 3 A Good heat dissipation condition 3
Over Temperature Protection TSHD+ 120 °C 4
Over Temperature Recovery Degree TSHD- 100 °C 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing ppa affecting the human body, such as exercise equipment ,medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, 12

CAD (KiCad official)

  • Symbol: XB5556G
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: xb5556g-etched.step / xb5556g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xb5556g.step / xb5556g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XySemi datasheet (12 pp, sha256 95d37b7346fdd6cb, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF