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Ray Publish 0.1.0 65923ee 3d ago

XB5352A

XySemi · Battery Management · SOT-23-5

XB5352A from XySemi, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VT passive Test pin (测试脚); the datasheet gives no electrical limit or operating function for this pin, so it should be treated as a test pad and not used as a circuit connection.
2 GND power_in Ground terminal, connected to the negative terminal of the battery cell; the internal discharge FET switches VM to this pin.
3 VDD power_in IC supply pin; the absolute maximum input voltage on VDD is -0.3 V to 6 V.
4 VM input Negative terminal of the battery pack (shared with pin 5); the internal FET switch connects it to GND, and the absolute maximum VM input voltage is -6 V to 10 V.
5 VM input Negative terminal of the battery pack (shared with pin 4); the internal FET switch connects it to GND, and the absolute maximum VM input voltage is -6 V to 10 V.

Key specifications

Parameter Value
Manufacturer XySemi
Package SOT-23-5
Category Power Management (PMIC)
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD input voltage VDD -0.3 6 V 2
VM input voltage VM -6 10 V 2
Operating ambient temperature -40 85 °C 3
Maximum junction temperature 125 °C 3
Storage temperature -55 150 °C 3
Pin temperature (soldering) 300 °C soldering, 10 s 3
Power dissipation 0.4 W ambient 25°C 3
ESD 2000 V 3
Overcharge detection voltage VCU 4.25 4.3 4.35 V 3
Overcharge release voltage VCL 4.05 4.1 4.15 V 3
Overdischarge detection voltage VDL 2.3 2.4 2.5 V 3
Overdischarge release voltage VDR 2.9 3 3.1 V 3
Overdischarge current 1 detection current *IIOV1 2.3 3.2 4.1 A VDD=3.6 3
Load short-circuiting detection current *ISHORT 10 20 30 A VDD=3.6 3
Normal operating current consumption IOPE 2.8 6 μA VDD=3.6, VM=0V 3
Power-down current consumption IPDN 1.5 3 μA VDD=2.0V, VM pin open 3
Internal resistance between VM and VDD *RVMD 320 kΩ VDD=2.0V, VM pin open 3
Internal resistance between VM and GND *RVMS 100 kΩ VDD=3.6V, VM=1.0V 3
FET on-resistance *RSS(ON) 40 45 55 mΩ VDD=3.6V, IVM=1.0A 4
Overtemperature protection temperature *TSHD+ 120 °C 4
Overtemperature protection recovery temperature *TSHD- 100 °C 4
Overcharge detection delay time tCU 130 200 mS 4
Overdischarge detection delay time tDL 40 60 mS 4
Overcurrent detection delay time *tIOV 10 mS VDD=3.6 4
Short-circuit detection delay time *tSHORT 75 uS VDD=3.6 4
Package thermal limit (junction) θJA θJA 250 °C/W 3
Package thermal resistance (junction to ambient) θJA θJA 130 °C/W 3

CAD (KiCad official)

  • Symbol: XB5352A
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: xb5352a-etched.step / xb5352a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xb5352a.step / xb5352a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XySemi datasheet (13 pp, sha256 8ef9d00780a550be, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF