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WTR06N300LS-HAF
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ST Semtech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WTR06N300LS-HAF
ST Semtech · MOSFETs · TO-252
WTR06N300LS-HAF from ST Semtech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V. |
| 2 | Drain | passive | Drain of the N-channel MOSFET; the datasheet rates drain-source voltage at 60 V and continuous drain current at 20 A (Tc = 25℃). |
| 3 | Source | passive | Source of the N-channel MOSFET; the body diode forward voltage is specified as 1.3 V max at IS = 1 A, VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 20 | A | Tc = 25℃ | 1 | ||
| Continuous Drain Current | ID | 13 | A | Tc = 100℃ | 1 | ||
| Peak Drain Current, Pulsed | IDM | 50 | A | Pulse test, see note 1 | 1 | ||
| Avalanche Current | IAS | 8.7 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 3.7 | mJ | See note 2 | 1 | ||
| Power Dissipation | PD | 25 | W | Tc = 25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Case | RθJC | 5 | ℃/W | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 50 | ℃/W | Surface mounted on FR-4, 2oz copper, 1-inch square copper plate, still air (note 3) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID = 10 mA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS = 48 V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V | 2 | |
| Gate-Source Threshold Voltage | VGSth | 1.2 | 2.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 26 | 34 | mΩ | VGS = 10 V, ID = 15 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 38 | mΩ | VGS = 4.5 V, ID = 10 A | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | IS = 1 A, VGS = 0 V | 2 | ||
| Body-Diode Continuous Current | IS | 20 | A | 2 | |||
| Body-Diode Continuous Current, Pulsed | ISM | 50 | A | 2 |
CAD (KiCad official)
- Symbol:
WTR06N300LS-HAF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wtr06n300ls-haf-etched.step/wtr06n300ls-haf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wtr06n300ls-haf.step/wtr06n300ls-haf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST Semtech datasheet (8 pp, sha256
62c5c3f41f7320d8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WTR06N300LS-HAF
**ST Semtech** · MOSFETs · TO-252
WTR06N300LS-HAF from ST Semtech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V. |
| 2 | Drain | passive | Drain of the N-channel MOSFET; the datasheet rates drain-source voltage at 60 V and continuous drain current at 20 A (Tc = 25℃). |
| 3 | Source | passive | Source of the N-channel MOSFET; the body diode forward voltage is specified as 1.3 V max at IS = 1 A, VGS = 0 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 20 | A | Tc = 25℃ | 1 |
| Continuous Drain Current | ID | | | 13 | A | Tc = 100℃ | 1 |
| Peak Drain Current, Pulsed | IDM | | | 50 | A | Pulse test, see note 1 | 1 |
| Avalanche Current | IAS | | | 8.7 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 3.7 | mJ | See note 2 | 1 |
| Power Dissipation | PD | | | 25 | W | Tc = 25℃ | 1 |
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Case | RθJC | | | 5 | ℃/W | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 50 | ℃/W | Surface mounted on FR-4, 2oz copper, 1-inch square copper plate, still air (note 3) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | ID = 10 mA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | µA | VDS = 48 V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±20 V | 2 |
| Gate-Source Threshold Voltage | VGSth | 1.2 | | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 26 | 34 | mΩ | VGS = 10 V, ID = 15 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 38 | mΩ | VGS = 4.5 V, ID = 10 A | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.3 | V | IS = 1 A, VGS = 0 V | 2 |
| Body-Diode Continuous Current | IS | | | 20 | A | | 2 |
| Body-Diode Continuous Current, Pulsed | ISM | | | 50 | A | | 2 |
## CAD (KiCad official)
- Symbol: `WTR06N300LS-HAF`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wtr06n300ls-haf-etched.step` / `wtr06n300ls-haf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wtr06n300ls-haf.step` / `wtr06n300ls-haf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ST Semtech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590235705289961472) (8 pp, sha256 `62c5c3f41f7320d8`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wtr06n300ls-haf-datasheet.pdf)