component
WTM3401
Public Made by Adomby adom
WPMtek Wei Pan Microelectronics MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| wtm3401-etched.glb | 7d ago |
| wtm3401-etched.step | 7d ago |
| wtm3401-hero.glb | 7d ago |
| wtm3401-hero.overlay.json | 7d ago |
| wtm3401.glb | 7d ago |
| wtm3401.kicad_mod | 7d ago |
| wtm3401.kicad_sym | 7d ago |
| wtm3401.lbr | 7d ago |
| wtm3401.step | 7d ago |
WTM3401
WPMtek Wei Pan Microelectronics · MOSFETs · SOT-23
WTM3401 from WPMtek Wei Pan Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; VGS absolute maximum ±20 V, threshold VGS(th) -0.5 V to -1.3 V at IDS = 250 µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous diode forward current IS max -4.7 A at TA = 25 °C. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS max -30 V and drain current -4.7 A at TA = 25 °C, VGS = 4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WPMtek Wei Pan Microelectronics |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA = 25 ℃ | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 ℃ | 2 | |
| Drain Current | ID | -4.7 | A | TA = 25 ℃, VGS = 4.5 V | 2 | ||
| Pulsed Drain Current | IDM | -20 | A | TA = 25 ℃, VGS = 4.5 V | 2 | ||
| Total Power Dissipation | Ptot | 1.3 | W | TA = 25 ℃ | 2 | ||
| Total Power Dissipation | Ptot | 0.8 | W | TA = 100 ℃ | 2 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Diode Forward Current | IS | -4.7 | A | TA = 25 ℃ | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 150 | ℃/W | Surface Mounted on 1 in2 pad area, t 10 sec (≤ symbol lost in extraction) | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0 V, IDS = 250 μA | 3 | ||
| Gate Threshold Voltage | VGS(th) | -0.5 | -1.3 | V | VDS = VGS, IDS = 250 μA | 3 | |
| Drain Leakage Current | IDSS | -1 | μA | VDS = -30 V, VGS = 0 V | 3 | ||
| Drain Leakage Current | IDSS | -30 | μA | TJ = 85 ℃ | 3 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ± 10 V, VDS = 0 V | 3 | |
| On-State Resistance | RDS(ON) | 42 | 52 | mΩ | VGS = -10 V, IDS = -4 A | 3 | |
| On-State Resistance | RDS(ON) | 48 | 65 | mΩ | VGS = -4.5 V, IDS = -2 A | 3 | |
| On-State Resistance | RDS(ON) | 68 | 85 | mΩ | VGS = -2.5 V, IDS = -1 A | 3 | |
| Diode Forward Voltage | VSD | -1.2 | V | ISD = -4.4 A, VGS = 0 V | 3 |
CAD (KiCad official)
- Symbol:
WTM3401 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wtm3401-etched.step/wtm3401-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wtm3401.step/wtm3401.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WPMtek Wei Pan Microelectronics datasheet (6 pp, sha256
87bd9ad72490da91, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).