# WTM30N20VP

**WPMtek Wei Pan Microelectronics** · MOSFETs · TO-247-3L

WTM30N20VP from WPMtek Wei Pan Microelectronics, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel power MOSFET, with gate-source voltage rated at ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for 200 V drain-source voltage (VDS) and 30 A continuous drain current at Tc=25°C (21 A at Tc=100°C). |
| 3 | Source | passive | Source terminal of the MOSFET, serving as the reference for the gate and drain ratings and the body diode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WPMtek Wei Pan Microelectronics |
| Package | TO-247-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 |  |  | V | VGS=0V, ID=250uA | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±30V, VDS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=200V, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250uA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 0.062 | 0.075 | Ω | VGS=10V, ID=18A | 2 |
| Drain-Source Voltage | VDS |  |  | 200 | V |  | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 30 | A | Tc=25°C | 1 |
| Continuous Drain Current | ID |  |  | 21 | A | Tc=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 120 | A | Repetitive; pulse width limited by max junction temperature (Note 2) | 1 |
| Avalanche Energy Single Pulsed | EAS |  |  | 1600 | mJ | L=10mH, VDD=50V, RG=25Ω, starting TJ=25°C (Note 3) | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 8.6 | V/ns |  | 1 |
| Power Dissipation | PD |  |  | 178 | W | Tc = 25°C | 1 |
| Operating Junction and Storage Temperature | Tj,Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction to Case | RthJC |  | 0.7 |  | °C/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RthJA |  | 40 |  | °C/W | min. footprint | 1 |

## CAD (KiCad official)

- Symbol: `WTM30N20VP`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files: `wtm30n20vp-etched.step` / `wtm30n20vp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wtm30n20vp.step` / `wtm30n20vp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WPMtek Wei Pan Microelectronics datasheet](docs/wtm30n20vp-datasheet.pdf) (8 pp, sha256 `9ddedad33665377d`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wtm30n20vp-datasheet.pdf)