component
WTM2305
Public Made by Adomby adom
WPMtek Wei Pan Microelectronics MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
WTM2305
WPMtek Wei Pan Microelectronics · MOSFETs · SOT-23
WTM2305 from WPMtek Wei Pan Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±12V. |
| 2 | S | passive | Source of the P-channel MOSFET, with drain-source voltage rated at -20V and continuous drain current of -4.1A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated at VDS -20V, continuous ID -4.1A and pulsed IDM -15A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WPMtek Wei Pan Microelectronics |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -4.1 | A | 1 | |||
| Pulsed Drain Current | IDM | -15 | A | Pulse width limited by maximum junction temperature (note 1) | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 75 C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | C | 1 | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 100 | C/W | PCB mounted, surface mounted on FR4, t<=5 sec (note 2) | 1 | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 166 | C/W | PCB mounted, surface mounted on FR4 (note 3) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250uA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 46 | 52 | mΩ | VGS = -4.5V, ID = -4.1A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 60 | 75 | mΩ | VGS = -2.5V, ID = -3.0A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 1 | V | VDS = VGS, ID = -250uA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -20V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | uA | VDS = -20V, VGS = 0V, TJ = 55 C | 2 | ||
| Gate Body Leakage | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 2 | |
| Max. Diode Forward Current | IS | -1.6 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS = -1.6A, VGS = 0V | 2 | ||
| Forward Transconductance | gfs | 6.5 | S | VDS = -5V, ID = -3.5A | 2 | ||
| Total Gate Charge | Qg | 5.8 | nC | VDS = -6V, ID -3.5A, VGS = -4.5V | 2 | ||
| Gate-Source Charge | Qgs | 0.85 | nC | VDS = -6V, ID -3.5A, VGS = -4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 1.7 | nC | VDS = -6V, ID -3.5A, VGS = -4.5V | 2 | ||
| Turn-On Delay Time | td(on) | 13 | ns | VDD = -6V, RL = 6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 2 | ||
| Turn-On Rise Time | tr | 36 | ns | VDD = -6V, RL = 6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 42 | ns | VDD = -6V, RL = 6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 2 | ||
| Turn-Off Fall Time | tf | 34 | ns | VDD = -6V, RL = 6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 2 | ||
| Input Capacitance | Ciss | 415 | pF | VDS = -6V, VGS = 0V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 223 | pF | VDS = -6V, VGS = 0V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 87 | pF | VDS = -6V, VGS = 0V, f = 1.0 MHz | 2 |
CAD (KiCad official)
- Symbol:
WTM2305 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wtm2305-etched.step/wtm2305-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wtm2305.step/wtm2305.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WPMtek Wei Pan Microelectronics datasheet (5 pp, sha256
2d8280236fa45bfc, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WTM2305
**WPMtek Wei Pan Microelectronics** · MOSFETs · SOT-23
WTM2305 from WPMtek Wei Pan Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±12V. |
| 2 | S | passive | Source of the P-channel MOSFET, with drain-source voltage rated at -20V and continuous drain current of -4.1A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated at VDS -20V, continuous ID -4.1A and pulsed IDM -15A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WPMtek Wei Pan Microelectronics |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | -4.1 | A | | 1 |
| Pulsed Drain Current | IDM | | | -15 | A | Pulse width limited by maximum junction temperature (note 1) | 1 |
| Maximum Power Dissipation | PD | | | 0.8 | W | TA = 75 C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | C | | 1 |
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | | | 100 | C/W | PCB mounted, surface mounted on FR4, t<=5 sec (note 2) | 1 |
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | | | 166 | C/W | PCB mounted, surface mounted on FR4 (note 3) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS = 0V, ID = -250uA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 46 | 52 | mΩ | VGS = -4.5V, ID = -4.1A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 60 | 75 | mΩ | VGS = -2.5V, ID = -3.0A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | | 1 | V | VDS = VGS, ID = -250uA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | uA | VDS = -20V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -10 | uA | VDS = -20V, VGS = 0V, TJ = 55 C | 2 |
| Gate Body Leakage | IGSS | -100 | | 100 | nA | VGS = ±12V, VDS = 0V | 2 |
| Max. Diode Forward Current | IS | | | -1.6 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | IS = -1.6A, VGS = 0V | 2 |
| Forward Transconductance | gfs | | 6.5 | | S | VDS = -5V, ID = -3.5A | 2 |
| Total Gate Charge | Qg | | 5.8 | | nC | VDS = -6V, ID -3.5A, VGS = -4.5V | 2 |
| Gate-Source Charge | Qgs | | 0.85 | | nC | VDS = -6V, ID -3.5A, VGS = -4.5V | 2 |
| Gate-Drain Charge | Qgd | | 1.7 | | nC | VDS = -6V, ID -3.5A, VGS = -4.5V | 2 |
| Turn-On Delay Time | td(on) | | 13 | | ns | VDD = -6V, RL = 6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 2 |
| Turn-On Rise Time | tr | | 36 | | ns | VDD = -6V, RL = 6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 2 |
| Turn-Off Delay Time | td(off) | | 42 | | ns | VDD = -6V, RL = 6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 2 |
| Turn-Off Fall Time | tf | | 34 | | ns | VDD = -6V, RL = 6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 2 |
| Input Capacitance | Ciss | | 415 | | pF | VDS = -6V, VGS = 0V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | 223 | | pF | VDS = -6V, VGS = 0V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 87 | | pF | VDS = -6V, VGS = 0V, f = 1.0 MHz | 2 |
## CAD (KiCad official)
- Symbol: `WTM2305`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `wtm2305-etched.step` / `wtm2305-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wtm2305.step` / `wtm2305.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WPMtek Wei Pan Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757101779009970176) (5 pp, sha256 `2d8280236fa45bfc`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wtm2305-datasheet.pdf)