component
WTM20N65CP
Public Made by Adomby adom
WPMtek(Wei Pan Microelectronics) MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WTM20N65CP
WPMtek(Wei Pan Microelectronics) · MOSFETs · TO-220
WTM20N65CP from WPMtek(Wei Pan Microelectronics), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with a gate-source voltage limit of ±30 V and a threshold of 2.5 V to 4.5 V. |
| 2 | D | passive | Drain (also connected to the mounting tab); handles 650 V drain-source voltage and 20 A continuous drain current at TC = 25℃. |
| 3 | S | passive | Source; the current return terminal, with a continuous body-diode forward current of 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WPMtek(Wei Pan Microelectronics) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | TC = 25°C | 1 | ||
| Drain Current - Continuous | ID | 20 | A | TC = 25℃ | 1 | ||
| Drain Current - Continuous | ID | 12 | A | TC = 100℃ | 1 | ||
| Drain Current - Pulsed | IDM | 57 | A | Note 1 | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 76 | mJ | Note 2 | 1 | ||
| Avalanche Current | IAR | 4 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 1.62 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 20 | V/ns | Note 3 | 1 | ||
| Power Dissipation | PD | 220 | W | TC = 25℃, TO-220 | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | ℃ | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 3.5 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 0.25mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 650 V, VGS = 0 V | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 0.25mA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 150 | 180 | mΩ | VGS = 10 V, ID = 10 A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 20 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 57 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0 V, IS = 10 A | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 2 | uA | VDS =480 V, TC = 125℃ | 2 | ||
| Input Capacitance | Ciss | 1240 | pF | VDS = 400 V, VGS = 0 V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 34 | pF | VDS = 400 V, VGS = 0 V, f = 1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 12 | ns | VDS = 400 V, ID = 10 A, RG = 10 Ω, VGS = 10 V | 2 | ||
| Turn-On Rise Time | tr | 8 | ns | VDS = 400 V, ID = 10 A, RG = 10 Ω, VGS = 10 V | 2 | ||
| Turn-Off Delay Time | td(off) | 53 | ns | VDS = 400 V, ID = 10 A, RG = 10 Ω, VGS = 10 V | 2 | ||
| Turn-Off Fall Time | tf | 10 | ns | VDS = 400 V, ID = 10 A, RG = 10 Ω, VGS = 10 V | 2 | ||
| Total Gate Charge | Qg | 30.2 | nC | VDS = 400 V, ID = 10 A, VGS = 10 V | 2 | ||
| Gate-Source Charge | Qgs | 5.8 | nC | VDS = 400 V, ID = 10 A, VGS = 10 V | 2 | ||
| Gate-Drain Charge | Qgd | 15.4 | nC | VDS = 400 V, ID = 10 A, VGS = 10 V | 2 | ||
| Gate Resistance | RG | 1.3 | Ω | f = 1MHz | 2 | ||
| Reverse Recovery Time | trr | 274 | ns | VDD = 400 V, IS = 10A, dIF/dt = 100 A/us | 2 | ||
| Reverse Recovery Charge | Qrr | 3.33 | uC | VDD = 400 V, IS = 10A, dIF/dt = 100 A/us | 2 |
CAD (KiCad official)
- Symbol:
WTM20N65CP - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
wtm20n65cp-etched.step/wtm20n65cp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wtm20n65cp.step/wtm20n65cp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WPMtek(Wei Pan Microelectronics) datasheet (9 pp, sha256
6de72b66d1ef68fe, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WTM20N65CP
**WPMtek(Wei Pan Microelectronics)** · MOSFETs · TO-220
WTM20N65CP from WPMtek(Wei Pan Microelectronics), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with a gate-source voltage limit of ±30 V and a threshold of 2.5 V to 4.5 V. |
| 2 | D | passive | Drain (also connected to the mounting tab); handles 650 V drain-source voltage and 20 A continuous drain current at TC = 25℃. |
| 3 | S | passive | Source; the current return terminal, with a continuous body-diode forward current of 20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WPMtek(Wei Pan Microelectronics) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | TC = 25°C | 1 |
| Drain Current - Continuous | ID | | | 20 | A | TC = 25℃ | 1 |
| Drain Current - Continuous | ID | | | 12 | A | TC = 100℃ | 1 |
| Drain Current - Pulsed | IDM | | | 57 | A | Note 1 | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 76 | mJ | Note 2 | 1 |
| Avalanche Current | IAR | | | 4 | A | Note 1 | 1 |
| Repetitive Avalanche Energy | EAR | | | 1.62 | mJ | Note 1 | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 20 | V/ns | Note 3 | 1 |
| Power Dissipation | PD | | | 220 | W | TC = 25℃, TO-220 | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | ℃ | 1/8" from case for 5 seconds | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 3.5 | ℃/W | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62.5 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS = 0 V, ID = 0.25mA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS = 650 V, VGS = 0 V | 2 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | | | nA | VGS = -30 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | 2.5 | | 4.5 | V | VDS = VGS, ID = 0.25mA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 150 | 180 | mΩ | VGS = 10 V, ID = 10 A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 20 | A | | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 57 | A | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS = 0 V, IS = 10 A | 2 |
| Zero Gate Voltage Drain Current | IDSS | | 2 | | uA | VDS =480 V, TC = 125℃ | 2 |
| Input Capacitance | Ciss | | 1240 | | pF | VDS = 400 V, VGS = 0 V, f = 1MHz | 2 |
| Output Capacitance | Coss | | 34 | | pF | VDS = 400 V, VGS = 0 V, f = 1MHz | 2 |
| Turn-On Delay Time | td(on) | | 12 | | ns | VDS = 400 V, ID = 10 A, RG = 10 Ω, VGS = 10 V | 2 |
| Turn-On Rise Time | tr | | 8 | | ns | VDS = 400 V, ID = 10 A, RG = 10 Ω, VGS = 10 V | 2 |
| Turn-Off Delay Time | td(off) | | 53 | | ns | VDS = 400 V, ID = 10 A, RG = 10 Ω, VGS = 10 V | 2 |
| Turn-Off Fall Time | tf | | 10 | | ns | VDS = 400 V, ID = 10 A, RG = 10 Ω, VGS = 10 V | 2 |
| Total Gate Charge | Qg | | 30.2 | | nC | VDS = 400 V, ID = 10 A, VGS = 10 V | 2 |
| Gate-Source Charge | Qgs | | 5.8 | | nC | VDS = 400 V, ID = 10 A, VGS = 10 V | 2 |
| Gate-Drain Charge | Qgd | | 15.4 | | nC | VDS = 400 V, ID = 10 A, VGS = 10 V | 2 |
| Gate Resistance | RG | | 1.3 | | Ω | f = 1MHz | 2 |
| Reverse Recovery Time | trr | | 274 | | ns | VDD = 400 V, IS = 10A, dIF/dt = 100 A/us | 2 |
| Reverse Recovery Charge | Qrr | | 3.33 | | uC | VDD = 400 V, IS = 10A, dIF/dt = 100 A/us | 2 |
## CAD (KiCad official)
- Symbol: `WTM20N65CP`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `wtm20n65cp-etched.step` / `wtm20n65cp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wtm20n65cp.step` / `wtm20n65cp.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WPMtek(Wei Pan Microelectronics) datasheet](docs/wtm20n65cp-datasheet.pdf) (9 pp, sha256 `6de72b66d1ef68fe`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wtm20n65cp-datasheet.pdf)