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WST3426

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Winsok Semicon MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WST3426

Winsok Semicon · MOSFETs · SOT-23-3L

WST3426 from Winsok Semicon, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±12 V absolute maximum and a threshold VGS(th) of 0.3 V min, 0.85 V typ, 1.2 V max at 250 uA.
2 S passive Source; the current return terminal of the N-channel MOSFET, with continuous source current IS up to 3.0 A through the body diode.
3 D passive Drain; VDS is rated 20 V maximum, with continuous drain current of 3.0 A at TC=25℃ and pulsed drain current of 10 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current (TC=25℃) ID@TC=25℃ 3 A VGS @ 4.5V 1
Continuous Drain Current (TC=70℃) ID@TC=70℃ 2.5 A VGS @ 4.5V 1
Pulsed Drain Current IDM 10 A pulse width ≤300us, duty cycle ≤2% 1
Total Power Dissipation PD@TA=25℃ 1 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 200 ℃/W note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec 1
Thermal Resistance Junction-Case RθJC 75 ℃/W note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 60 75 mΩ VGS=4.5V, ID=1.8A 2
Static Drain-Source On-Resistance RDS(ON) 70 85 mΩ VGS=2.5V, ID=1.5A 2
Static Drain-Source On-Resistance RDS(ON) 90 110 mΩ VGS=1.8V, ID=1A 2
Gate Threshold Voltage VGS(th) 0.3 0.85 1.2 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±8V, VDS=0V 2
Gate Resistance Rg 1.5 3 Ω VDS=0V, VGS=0V, f=1MHz 2
Continuous Source Current IS 3 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 9 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.024 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -2.51 mV/℃ 2
Forward Transconductance gfs 8 S VDS=5V, ID=3A 2
Total Gate Charge (4.5V) Qg 5.4 nC VDS=15V, VGS=4.5V, ID=1A 2
Gate-Source Charge Qgs 0.44 nC 2
Gate-Drain Charge Qgd 1 nC 2
Turn-On Delay Time Td(on) 1.5 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=1A 2
Rise Time Tr 25.6 ns 2
Turn-Off Delay Time Td(off) 16.8 ns 2
Fall Time Tf 5.5 ns 2
Input Capacitance Ciss 320 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 35 pF 2
Reverse Transfer Capacitance Crss 22 pF 2
Reverse Recovery Time trr 5.1 nS IF=2A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 1.5 nC 2

CAD (KiCad official)

  • Symbol: WST3426
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: wst3426-etched.step / wst3426-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wst3426.step / wst3426.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 f3c418b91cc38398, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF