component
WST3407
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWST3407
Winsok Semicon · MOSFETs · SOT-23-3L
WST3407 from Winsok Semicon, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the pin-configuration drawing labels the bottom-left lead G, and the gate-source voltage is rated ±20 V. |
| 2 | S | passive | Source; the pin-configuration drawing labels the bottom-right lead S, with continuous source current of -2 A (IS) and drain-source voltage rating of -30 V. |
| 3 | D | passive | Drain; the pin-configuration drawing labels the single top lead D, with a drain-source voltage rating of -30 V and continuous drain current of -5.8 A at steady state. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -6.3 | A | VGS @ -10V, 10s | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -5.8 | A | VGS @ -10V, steady state | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | -4.5 | A | VGS @ -10V, 10s | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | -3.5 | A | VGS @ -10V, steady state | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.32 | W | 10s | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 1 | W | steady state | 1 | ||
| Total Power Dissipation | PD@TA=70℃ | 0.84 | W | 10s | 1 | ||
| Total Power Dissipation | PD@TA=70℃ | 0.64 | W | steady state | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 95 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 41 | 52 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 62 | 90 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.8 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Total Gate Charge (-4.5V) | Qg | 6.4 | 9 | nC | VDS=-15V, VGS=-4.5V, ID=-3A | 2 | |
| Gate-Source Charge | Qgs | 2.3 | 3.2 | nC | VDS=-15V, VGS=-4.5V, ID=-3A | 2 | |
| Gate-Drain Charge | Qgd | 1.9 | 2.7 | nC | VDS=-15V, VGS=-4.5V, ID=-3A | 2 | |
| Turn-On Delay Time | Td(on) | 2.8 | 5.6 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-3A | 2 | |
| Rise Time | Tr | 8.4 | 15.1 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-3A | 2 | |
| Turn-Off Delay Time | Td(off) | 39 | 78 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-3A | 2 | |
| Fall Time | Tf | 6 | 12 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-3A | 2 | |
| Input Capacitance | Ciss | 583 | 816 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 100 | 140 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 80 | 112 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | -2 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -20 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Reverse Recovery Time | trr | 11 | nS | IF=-3A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WST3407 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
wst3407-etched.step/wst3407-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wst3407.step/wst3407.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
8ea6e1d2d90c6494, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).