component
WST3400
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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wst3400: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
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WST3400
Winsok Semicon · MOSFETs · SOT-23-3L
WST3400 from Winsok Semicon, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12V, threshold 0.5V min to 1.2V max at ID=250uA. |
| 2 | S | passive | Source; continuous drain current is 7.0A steady state at 25℃ case temperature. |
| 3 | D | passive | Drain; drain-source voltage rated 30V with pulsed drain current of 25A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 28 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Gate Resistance | Rg | 2.5 | 5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Total Gate Charge (4.5V) | Qg | 6 | 8.4 | nC | VDS=15V, VGS=4.5V, ID=5A | 2 | |
| Gate-Source Charge | Qgs | 2.5 | 3.5 | nC | VDS=15V, VGS=4.5V, ID=5A | 2 | |
| Gate-Drain Charge | Qgd | 2.1 | 2.9 | nC | VDS=15V, VGS=4.5V, ID=5A | 2 | |
| Turn-On Delay Time | Td(on) | 2.4 | 4.8 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=5A | 2 | |
| Rise Time | Tr | 7.8 | 14 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=5A | 2 | |
| Turn-Off Delay Time | Td(off) | 22 | 44 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=5A | 2 | |
| Fall Time | Tf | 4 | 8 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=5A | 2 | |
| Input Capacitance | Ciss | 572 | 800 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 81 | 112 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 65 | 91 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 2 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 25 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V (10s column) | ID@Tc=25℃ | 8.5 | A | Tc=25℃, 10s | 1 | ||
| Continuous Drain Current, VGS @ 10V (Steady State column) | ID@Tc=25℃ | 7 | A | Tc=25℃, steady state | 1 | ||
| Continuous Drain Current, VGS @ 10V (10s column) | ID@Tc=70℃ | 6.9 | A | Tc=70℃, 10s | 1 | ||
| Continuous Drain Current, VGS @ 10V (Steady State column) | ID@Tc=70℃ | 6 | A | Tc=70℃, steady state | 1 | ||
| Pulsed Drain Current | IDM | 25 | A | 1 | |||
| Total Power Dissipation (10s column) | PD@TA=25℃ | 1.32 | W | TA=25℃, 10s | 1 | ||
| Total Power Dissipation (Steady State column) | PD@TA=25℃ | 1 | W | TA=25℃, steady state | 1 | ||
| Total Power Dissipation (10s column) | PD@TA=70℃ | 0.84 | W | TA=70℃, 10s | 1 | ||
| Total Power Dissipation (Steady State column) | PD@TA=70℃ | 0.64 | W | TA=70℃, steady state | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | 95 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
WST3400 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
wst3400-etched.step/wst3400-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wst3400.step/wst3400.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
70905a974ec92e75, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WST3400
**Winsok Semicon** · MOSFETs · SOT-23-3L
WST3400 from Winsok Semicon, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12V, threshold 0.5V min to 1.2V max at ID=250uA. |
| 2 | S | passive | Source; continuous drain current is 7.0A steady state at 25℃ case temperature. |
| 3 | D | passive | Drain; drain-source voltage rated 30V with pulsed drain current of 25A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 18 | 28 | mΩ | VGS=4.5V, ID=5A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Gate Resistance | Rg | | 2.5 | 5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (4.5V) | Qg | | 6 | 8.4 | nC | VDS=15V, VGS=4.5V, ID=5A | 2 |
| Gate-Source Charge | Qgs | | 2.5 | 3.5 | nC | VDS=15V, VGS=4.5V, ID=5A | 2 |
| Gate-Drain Charge | Qgd | | 2.1 | 2.9 | nC | VDS=15V, VGS=4.5V, ID=5A | 2 |
| Turn-On Delay Time | Td(on) | | 2.4 | 4.8 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=5A | 2 |
| Rise Time | Tr | | 7.8 | 14 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=5A | 2 |
| Turn-Off Delay Time | Td(off) | | 22 | 44 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=5A | 2 |
| Fall Time | Tf | | 4 | 8 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=5A | 2 |
| Input Capacitance | Ciss | | 572 | 800 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 81 | 112 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 65 | 91 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | 2 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 25 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current, VGS @ 10V (10s column) | ID@Tc=25℃ | | | 8.5 | A | Tc=25℃, 10s | 1 |
| Continuous Drain Current, VGS @ 10V (Steady State column) | ID@Tc=25℃ | | | 7 | A | Tc=25℃, steady state | 1 |
| Continuous Drain Current, VGS @ 10V (10s column) | ID@Tc=70℃ | | | 6.9 | A | Tc=70℃, 10s | 1 |
| Continuous Drain Current, VGS @ 10V (Steady State column) | ID@Tc=70℃ | | | 6 | A | Tc=70℃, steady state | 1 |
| Pulsed Drain Current | IDM | | | 25 | A | | 1 |
| Total Power Dissipation (10s column) | PD@TA=25℃ | | | 1.32 | W | TA=25℃, 10s | 1 |
| Total Power Dissipation (Steady State column) | PD@TA=25℃ | | | 1 | W | TA=25℃, steady state | 1 |
| Total Power Dissipation (10s column) | PD@TA=70℃ | | | 0.84 | W | TA=70℃, 10s | 1 |
| Total Power Dissipation (Steady State column) | PD@TA=70℃ | | | 0.64 | W | TA=70℃, steady state | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 125 | ℃/W | | 1 |
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | | | 95 | ℃/W | t ≤10s | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 80 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `WST3400`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `wst3400-etched.step` / `wst3400-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wst3400.step` / `wst3400.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586177295363289088) (5 pp, sha256 `70905a974ec92e75`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wst3400-datasheet.pdf)