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Contents

README

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WST2007

Winsok Semicon · MOSFETs · SOT-363

WST2007 from Winsok Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1 (Q1); drain-source rated 20 V, 1.4 A continuous.
2 G1 input Gate of MOSFET 1 (Q1); gate-source voltage limited to ±8 V, threshold 0.3 to 1 V.
3 D2 passive Drain of MOSFET 2 (Q2); drain-source rated 20 V, 1.4 A continuous.
4 S2 passive Source of N-channel MOSFET 2 (Q2); drain-source rated 20 V, 1.4 A continuous.
5 G2 input Gate of MOSFET 2 (Q2); gate-source voltage limited to ±8 V, threshold 0.3 to 1 V.
6 D1 passive Drain of MOSFET 1 (Q1); drain-source rated 20 V, 1.4 A continuous.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current, VGS @ 4.5V ID@TA=25℃ 1.4 A TA=25℃ (note 1) 1
Continuous Drain Current, VGS @ 4.5V ID@TA=70℃ 1.1 A TA=70℃ (note 1) 1
Pulsed Drain Current IDM 7.2 A Note 2 1
Total Power Dissipation PD@TA=25℃ 0.33 W TA=25℃ (note 3) 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 375 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 240 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 140 450 mΩ VGS=4.5V, ID=1.5A 2
Static Drain-Source On-Resistance RDS(ON) 180 765 mΩ VGS=2.5V, ID=1A 2
Static Drain-Source On-Resistance RDS(ON) 270 850 mΩ VGS=1.8V, ID=0.8A 2
Gate Threshold Voltage VGS(th) 0.3 0.6 1 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±8V, VDS=0V 2
Gate Resistance Rg 2 4 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 3.3 4.6 nC VDS=15V, VGS=4.5V, ID=1A 2
Gate-Source Charge Qgs 0.51 0.7 nC VDS=15V, VGS=4.5V, ID=1A 2
Gate-Drain Charge Qgd 0.88 1.2 nC VDS=15V, VGS=4.5V, ID=1A 2
Turn-On Delay Time Td(on) 2 4 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=1A 2
Rise Time Tr 29.2 53 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=1A 2
Turn-Off Delay Time Td(off) 10 20 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=1A 2
Fall Time Tf 6.8 13.6 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=1A 2
Input Capacitance Ciss 204 286 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 43.6 61 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 30 42 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 1.4 A VG=VD=0V, Force Current (notes 1,4) 2
Pulsed Source Current ISM 7.2 A Notes 2,4 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WST2007
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: wst2007-etched.step / wst2007-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wst2007.step / wst2007.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 06d56201546dade5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF