component
WST2006
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Winsok Semicon MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WST2006
Winsok Semicon · MOSFETs · SOT-363
WST2006 from Winsok Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); drain-source voltage rated 30 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V with threshold of 1.0 to 2.0 V. |
| 3 | D2 | passive | Drain of MOSFET 2; drain-source voltage rated 30 V and continuous drain current 0.17 A at 25℃. |
| 4 | S2 | passive | Source of MOSFET 2 (N-channel); drain-source voltage rated 30 V. |
| 5 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V with threshold of 1.0 to 2.0 V. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rated 30 V and continuous drain current 0.17 A at 25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 0.17 | A | VGS @ 4.5V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 0.1 | A | VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 0.8 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 0.2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 625 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 240 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 5.5 | 7.5 | Ω | VGS=10V, ID=1.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 13.5 | Ω | VGS=5V, ID=1A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 500 | uA | VDS=30V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -10 | 10 | nA | VGS=±20V, VDS=0V | 2 | |
| Turn-On Delay Time | Td(on) | 2 | 4 | ns | VDD=30V, VGS=10V, RG=150Ω, ID=0.2A | 2 | |
| Turn-Off Delay Time | Td(off) | 10 | 20 | ns | VDD=30V, VGS=10V, RG=150Ω, ID=0.2A | 2 | |
| Input Capacitance | Ciss | 22 | 50 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 11 | 25 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 2 | 5 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | |
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | 0.02 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th) | -2.5 | mV/℃ | 2 |
CAD (KiCad official)
- Symbol:
WST2006 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
wst2006-etched.step/wst2006-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wst2006.step/wst2006.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
6d2033efd7015534, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WST2006
**Winsok Semicon** · MOSFETs · SOT-363
WST2006 from Winsok Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); drain-source voltage rated 30 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V with threshold of 1.0 to 2.0 V. |
| 3 | D2 | passive | Drain of MOSFET 2; drain-source voltage rated 30 V and continuous drain current 0.17 A at 25℃. |
| 4 | S2 | passive | Source of MOSFET 2 (N-channel); drain-source voltage rated 30 V. |
| 5 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V with threshold of 1.0 to 2.0 V. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rated 30 V and continuous drain current 0.17 A at 25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TA=25℃ | | | 0.17 | A | VGS @ 4.5V | 1 |
| Continuous Drain Current | ID@TA=70℃ | | | 0.1 | A | VGS @ 4.5V | 1 |
| Pulsed Drain Current | IDM | | | 0.8 | A | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 0.2 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 625 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 240 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 5.5 | 7.5 | Ω | VGS=10V, ID=1.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 13.5 | Ω | VGS=5V, ID=1A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 500 | uA | VDS=30V, VGS=0V, TJ=125℃ | 2 |
| Gate-Source Leakage Current | IGSS | -10 | | 10 | nA | VGS=±20V, VDS=0V | 2 |
| Turn-On Delay Time | Td(on) | | 2 | 4 | ns | VDD=30V, VGS=10V, RG=150Ω, ID=0.2A | 2 |
| Turn-Off Delay Time | Td(off) | | 10 | 20 | ns | VDD=30V, VGS=10V, RG=150Ω, ID=0.2A | 2 |
| Input Capacitance | Ciss | | 22 | 50 | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 11 | 25 | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 2 | 5 | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.02 | | V/℃ | Reference to 25℃, ID=1mA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th) | | -2.5 | | mV/℃ | | 2 |
## CAD (KiCad official)
- Symbol: `WST2006`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `wst2006-etched.step` / `wst2006-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wst2006.step` / `wst2006.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590923908071968768) (5 pp, sha256 `6d2033efd7015534`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wst2006-datasheet.pdf)