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Contents

README

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WST05P06

Winsok Semicon · MOSFETs · SOT-23-6L

WST05P06 from Winsok Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal (tied internally with pins 2, 5 and 6); drain-source voltage VDS is rated -60 V.
2 D passive Drain terminal (tied internally with pins 1, 5 and 6); drain-source voltage VDS is rated -60 V.
3 G input Gate terminal; gate-source voltage VGS is rated ±20 V.
4 S passive Source terminal; continuous source current IS is limited to -4.9 A and pulsed source current ISM to -11 A.
5 D passive Drain terminal (tied internally with pins 1, 2 and 6); drain-source voltage VDS is rated -60 V.
6 D passive Drain terminal (tied internally with pins 1, 2 and 5); drain-source voltage VDS is rated -60 V.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ -4.9 A VGS @ -4.5V 1
Continuous Drain Current ID@TC=70℃ -3.3 A VGS @ -4.5V 1
Pulsed Drain Current IDM -11 A 1
Total Power Dissipation PD@TA=25℃ 1.3 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 125 ℃/W Footnote 1: mounted on 1 in² FR-4 board, 2oz Cu, t<10 s 1
Thermal Resistance Junction-Case RθJC 80 ℃/W Footnote 1: mounted on 1 in² FR-4 board, 2oz Cu, t<10 s 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 68 85 mΩ VGS=-10V, ID=-4.9A 2
Static Drain-Source On-Resistance RDS(ON) 80 110 mΩ VGS=-4.5V, ID=-2.5A 2
Gate Threshold Voltage VGS(th) -0.5 -0.8 -1.2 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Total Gate Charge (-4.5V) Qg 11 15.4 nC VDS=-30V, VGS=-4.5V, ID=-2.9A 2
Gate-Source Charge Qgs 1.4 2.1 nC VDS=-30V, VGS=-4.5V, ID=-2.9A 2
Gate-Drain Charge Qgd 2.4 3.2 nC VDS=-30V, VGS=-4.5V, ID=-2.9A 2
Turn-On Delay Time Td(on) 5.8 11 ns VDD=-30V, VGS=-4.5V, RG=3.3Ω, ID=-2.9A 2
Rise Time Tr 8.5 16 ns VDD=-30V, VGS=-4.5V, RG=3.3Ω, ID=-2.9A 2
Turn-Off Delay Time Td(off) 36 65 ns VDD=-30V, VGS=-4.5V, RG=3.3Ω, ID=-2.9A 2
Fall Time Tf 5.6 11 ns VDD=-30V, VGS=-4.5V, RG=3.3Ω, ID=-2.9A 2
Input Capacitance Ciss 430 560 pF VDS=-30V, VGS=0V, f=1MHz 2
Output Capacitance Coss 41 66 pF VDS=-30V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 25 35 pF VDS=-30V, VGS=0V, f=1MHz 2
Continuous Source Current IS -4.9 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -11 A 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WST05P06
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: wst05p06-etched.step / wst05p06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wst05p06.step / wst05p06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (8 pp, sha256 be43ca4375294bfe, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF