component
WST02N30
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WST02N30
Winsok Semicon · MOSFETs · SOT-23
WST02N30 from Winsok Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives a gate-source limit of ±20 V, a threshold of 2.0 to 4.0 V (VDS=VGS, ID=250uA) and gate leakage of ±100 nA max at VGS=±20V. |
| 2 | S | passive | Source; the body diode carries a continuous source current of 2.0 A max and a pulsed source current of 12 A max. |
| 3 | D | passive | Drain; the drain-source voltage is rated at 300 V and the continuous drain current at 2.0 A (Tc=25℃). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 300 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 2 | A | Tc=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 1.1 | A | Tc=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | 1 | |||
| Total Power Dissipation | PD | 1.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 60 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 300 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3 | 4 | Ω | VGS=10V, ID=1.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.5 | 5.5 | Ω | VGS=6V, ID=0.5A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=300V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=240V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 2 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 12 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WST02N30 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wst02n30-etched.step/wst02n30-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wst02n30.step/wst02n30.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
d238350e67ef7b7b, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WST02N30
**Winsok Semicon** · MOSFETs · SOT-23
WST02N30 from Winsok Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives a gate-source limit of ±20 V, a threshold of 2.0 to 4.0 V (VDS=VGS, ID=250uA) and gate leakage of ±100 nA max at VGS=±20V. |
| 2 | S | passive | Source; the body diode carries a continuous source current of 2.0 A max and a pulsed source current of 12 A max. |
| 3 | D | passive | Drain; the drain-source voltage is rated at 300 V and the continuous drain current at 2.0 A (Tc=25℃). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 300 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 2 | A | Tc=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID | | | 1.1 | A | Tc=70℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 12 | A | | 1 |
| Total Power Dissipation | PD | | | 1.5 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 125 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 60 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 300 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3 | 4 | Ω | VGS=10V, ID=1.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 4.5 | 5.5 | Ω | VGS=6V, ID=0.5A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=300V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 100 | uA | VDS=240V, VGS=0V, TJ=125℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | 2 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 12 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1.4 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WST02N30`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `wst02n30-etched.step` / `wst02n30-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wst02n30.step` / `wst02n30.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](docs/wst02n30-datasheet.pdf) (5 pp, sha256 `d238350e67ef7b7b`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wst02n30-datasheet.pdf)