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WST02N10

Public Made by Adom

by adom

Winsok Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WST02N10

Winsok Semicon · MOSFETs · SOT-23

WST02N10 from Winsok Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold VGS(th) 1.0 to 2.5 V at ID=250uA.
2 S passive Source; continuous source current up to 2.0 A and pulsed 5 A through the body diode.
3 D passive Drain; drain-source voltage rated 100 V with 2.0 A continuous and 5 A pulsed drain current.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@Tc=25℃ 2 A VGS @ 10V, Tc=25℃ 1
Continuous Drain Current ID@Tc=70℃ 1 A VGS @ 10V, Tc=70℃ 1
Pulsed Drain Current IDM 5 A Pulse width ≦ 300us, duty cycle ≦ 2% (note 2) 1
Total Power Dissipation PD@TA=25℃ 1 W TA=25℃ (note 3) 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec 1
Thermal Resistance Junction-Case RθJC 80 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 180 250 mΩ VGS=10V, ID=1A 2
Static Drain-Source On-Resistance RDS(ON) 250 320 mΩ VGS=4.5V, ID=0.5A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=80V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=80V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 2.8 5.6 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 9.7 13.6 nC VDS=80V, VGS=10V, ID=1A 2
Gate-Source Charge Qgs 1.6 2.2 nC VDS=80V, VGS=10V, ID=1A 2
Gate-Drain Charge Qgd 1.7 2.4 nC VDS=80V, VGS=10V, ID=1A 2
Turn-On Delay Time Td(on) 1.6 3.2 ns VDD=50V, VGS=10V, RG=3.3Ω, ID=1A 2
Rise Time Tr 19 34 ns VDD=50V, VGS=10V, RG=3.3Ω, ID=1A 2
Turn-Off Delay Time Td(off) 13.6 27 ns VDD=50V, VGS=10V, RG=3.3Ω, ID=1A 2
Fall Time Tf 19 38 ns VDD=50V, VGS=10V, RG=3.3Ω, ID=1A 2
Input Capacitance Ciss 508 711 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 29 41 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 16.4 23 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 2 A VG=VD=0V, Force Current (notes 1,4) 2
Pulsed Source Current ISM 5 A notes 2,4 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WST02N10
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wst02n10-etched.step / wst02n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wst02n10.step / wst02n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 6c14bb70746793dc, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF