component
WSR88P06
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 15d ago |
| viewers | 15d ago |
| package.json | 15d ago |
| page.json | 15d ago |
| README.md | 15d ago |
| wsr88p06-etched.glb | 15d ago |
| wsr88p06-etched.step | 15d ago |
| wsr88p06-hero.glb | 15d ago |
| wsr88p06-hero.overlay.json | 15d ago |
| wsr88p06.glb | 15d ago |
| wsr88p06.kicad_mod | 15d ago |
| wsr88p06.kicad_sym | 15d ago |
| wsr88p06.lbr | 15d ago |
| wsr88p06.step | 15d ago |
WSR88P06
Winsok Semicon · MOSFETs · TO-220
WSR88P06 from Winsok Semicon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold -1.0 V min to -2.5 V max at ID=-250uA. |
| 2 | D | passive | Drain, also connected to the mounting tab; VDS max -60 V and continuous drain current -88 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current is -80 A max, body diode forward voltage -1.2 V max at IS=-1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | -68 | V | VGS=0V, ID=-250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9 | 11 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 12 | 16 | mΩ | VGS=-4.5V, ID=-15A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-60V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-60V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -80 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -240 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | -88 | A | -VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -50 | A | -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -320 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 450 | mJ | TC=25℃ | 1 | ||
| Avalanche Current | IAS | 41 | A | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 110 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 1.1 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 60 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.035 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.28 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 50 | S | VDS=-5V, ID=-20A | 2 | ||
| Gate Resistance | Rg | 2 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 56 | nC | VDS=-30V, VGS=-10V, ID=-20A | 2 | ||
| Gate-Source Charge | Qgs | 11 | nC | VDS=-30V, VGS=-10V, ID=-20A | 2 | ||
| Gate-Drain Charge | Qgd | 9 | nC | VDS=-30V, VGS=-10V, ID=-20A | 2 | ||
| Turn-On Delay Time | Td(on) | 4.5 | ns | VDD=-30V, VGS=-10V, RG=3Ω, ID=-20A | 2 | ||
| Rise Time | Tr | 2.5 | ns | VDD=-30V, VGS=-10V, RG=3Ω, ID=-20A | 2 | ||
| Turn-Off Delay Time | Td(off) | 14.5 | ns | VDD=-30V, VGS=-10V, RG=3Ω, ID=-20A | 2 | ||
| Fall Time | Tf | 3.8 | ns | VDD=-30V, VGS=-10V, RG=3Ω, ID=-20A | 2 | ||
| Input Capacitance | Ciss | 3500 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 600 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 25 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
WSR88P06 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
wsr88p06-etched.step/wsr88p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsr88p06.step/wsr88p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
dae58a87ea88e48e, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).