component

WSR80N06

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorswsr80n06factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers wsr80n06: viewers · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago
wsr80n06-etched.glb Publish 0.1.0 · Ray 23d ago
wsr80n06-etched.step wsr80n06: factory component page (tier=lcsc) · Ray 23d ago
wsr80n06-hero.glb wsr80n06: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
wsr80n06-hero.overlay.json Publish 0.1.0 · Ray 23d ago
wsr80n06.glb Publish 0.1.0 · Ray 23d ago
wsr80n06.kicad_mod Publish 0.1.0 · Ray 23d ago
wsr80n06.kicad_sym Publish 0.1.0 · Ray 23d ago
wsr80n06.lbr Publish 0.1.0 · Ray 23d ago
wsr80n06.step Publish 0.1.0 · Ray 23d ago

WSR80N06

Winsok Semicon · MOSFETs · TO-220AB-3

WSR80N06 from Winsok Semicon, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with gate threshold of 2.0 to 4.0 V at VGS=VDS, ID=250uA.
2 D passive Drain, connected to the metal tab; drain-source voltage is rated 60 V with continuous drain current of 80 A at TC=25℃.
3 S passive Source; continuous source (body diode) current is 80 A maximum.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 80 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 50 A VGS @ 10V 1
Pulsed Drain Current IDM 300 A 1
Single Pulse Avalanche Energy EAS 450 mJ Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω 1
Total Power Dissipation PD@TC=25℃ 110 W 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.57 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 9.1 11.5 mΩ VGS=10V, ID=30A 2
Gate Threshold Voltage VGS(th) 2 3 4 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Forward Transconductance gfs 20 S VDS=5V, ID=15A 2
Total Gate Charge (4.5V) Qg 36 45 nC VDS=30V, VGS=4.5V, ID=30A 2
Gate-Source Charge Qgs 9.9 18 nC VDS=30V, VGS=4.5V, ID=30A 2
Gate-Drain Charge Qgd 6.6 15 nC VDS=30V, VGS=4.5V, ID=30A 2
Turn-On Delay Time Td(on) 16 28 ns 2
Rise Time Tr 10 21 ns 2
Turn-Off Delay Time Td(off) 45 65 ns 2
Fall Time Tf 12 22 ns 2
Continuous Source Current IS 80 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Input Capacitance Ciss 2350 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 237 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 205 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 28 nS IF=80A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 49 nC IF=80A, dI/dt=100A/µs, TJ=25℃ 2
BVDSS Temperature Coefficient ΔBVDSS/ΔTJ 0.057 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient ΔVGS(th) -5.68 mV/℃ 2

CAD (KiCad official)

  • Symbol: WSR80N06
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: wsr80n06-etched.step / wsr80n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsr80n06.step / wsr80n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 32e9b59b27e1f5fa, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF