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WSR2N65

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSR2N65

Winsok Semicon · MOSFETs · TO-220

WSR2N65 from Winsok Semicon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rating is ±30 V, with gate threshold of 2.0 to 4.0 V at ID=250uA.
2 D passive Drain (also connected to the mounting tab); drain-source voltage rating is 650 V and continuous drain current is 2 A at TC=25℃.
3 S passive Source; body diode continuous source current is 2 A and pulsed source current is 6 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4 4.8 Ω VGS=10V , ID=1A 2
Gate Threshold Voltage VGS(th) 2 3 4 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=650V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 10 uA VDS=520V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±30V , VDS=0V 2
Continuous Source Current IS 2 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 6 A 2
Diode Forward Voltage VSD 1.4 V VGS=0V , IS=2A , TJ=25℃ 2
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID@TC=25℃ 2 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 1 A VGS @ 10V 1
Pulsed Drain Current IDM 6 A 1
Single Pulse Avalanche Energy EAS 57 mJ 1
Total Power Dissipation PD 25 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-Case RθJC 5 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△TJ 0.6 V/℃ Reference to 25℃ , ID=250uA 2
VGS(th) Temperature Coefficient △VGS(th) -4.57 mV/℃ 2
Forward Transconductance gfs 5 S VDS=300V , ID=1A 2
Total Gate Charge (10V) Qg 8 nC VDS=520V , VGS=10V , ID=1A 2
Gate-Source Charge Qgs 1.2 nC VDS=520V , VGS=10V , ID=1A 2
Gate-Drain Charge Qgd 5 nC VDS=520V , VGS=10V , ID=1A 2
Turn-On Delay Time Td(on) 7.8 ns VDD=300V , VGS=10V , RG=25Ω, ID=1A 2
Rise Time Tr 33 ns VDD=300V , VGS=10V , RG=25Ω, ID=1A 2
Turn-Off Delay Time Td(off) 23 ns VDD=300V , VGS=10V , RG=25Ω, ID=1A 2
Fall Time Tf 59 ns VDD=300V , VGS=10V , RG=25Ω, ID=1A 2
Input Capacitance Ciss 310 pF VDS=25V , VGS=0V , f=1MHz 2
Output Capacitance Coss 39 pF VDS=25V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 6 pF VDS=25V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 80 nS IF=2A , dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 1800 nC IF=2A , dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: WSR2N65
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wsr2n65-etched.step / wsr2n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsr2n65.step / wsr2n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 b011401cfde60fc4, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF