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WSR170N04G

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSR170N04G

Winsok Semicon · MOSFETs · TO-220AB

WSR170N04G from Winsok Semicon, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input, with a maximum gate-source voltage of ±20 V and a gate threshold of 1.2 V min to 2.5 V max.
2 D passive Drain, which is also connected to the metal tab, rated for a maximum drain-source voltage of 40 V and a continuous current of 170 A at TC=25℃.
3 S passive Source terminal, carrying up to 170 A continuous at TC=25℃, with the body diode between source and drain.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V , ID=250uA 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=40V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=40V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Static Drain-Source On-Resistance RDS(ON) 1.9 3 mΩ VGS=10V , ID=20A 2
Continuous Source Current IS 170 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 800 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 170 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 135 A VGS @ 10V 1
Pulsed Drain Current IDM 800 A 1
Single Pulse Avalanche Energy EAS 450 mJ 1
Total Power Dissipation PD@TC=25℃ 185 W 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 50 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.7 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△TJ 0.057 V/℃ Reference to 25℃ , ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -5.68 mV/℃ 2
Gate Resistance Rg 1 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 45 nC VDS=20V , VGS=10V , ID=20A 2
Gate-Source Charge Qgs 12 nC VDS=20V , VGS=10V , ID=20A 2
Gate-Drain Charge Qgd 18 nC VDS=20V , VGS=10V , ID=20A 2
Turn-On Delay Time Td(on) 19 ns VDS=20V , VGS=10V , ID=20A , Rg=1Ω 2
Rise Time Tr 10 ns VDS=20V , VGS=10V , ID=20A , Rg=1Ω 2
Turn-Off Delay Time Td(off) 59 ns VDS=20V , VGS=10V , ID=20A , Rg=1Ω 2
Fall Time Tf 32 ns VDS=20V , VGS=10V , ID=20A , Rg=1Ω 2
Input Capacitance Ciss 3950 pF VDS=20V , VGS=0V , f=1MHz 2
Output Capacitance Coss 1120 pF VDS=20V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 98 pF VDS=20V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 35 nS IF=20A ,dI/dt=100A/µs,TJ=25℃ 2
Reverse Recovery Charge Qrr 56 nC IF=20A ,dI/dt=100A/µs,TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSR170N04G
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: wsr170n04g-etched.step / wsr170n04g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsr170n04g.step / wsr170n04g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 eef4fbd7f94d9837, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF